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Pixel sensor cell for cmos image sensors with enhanced conversion gain at high dynamic range capability

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Time-resolved imaging with SPAD detectors

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In this article, we report on SwissSPAD3 (SS3), a 500 x 500 pixel single-photon avalanche diode (SPAD) array, fabricated in 0.18-mu m CMOS technology. In this sensor, we introduce a novel dual-gate architecture with two contiguous temporal windows, or gate ...

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