Publications related to Single site-controlled inverted pyramidal InGaAs QD-nanocavity operating at the onset of the strong coupling regime

Related publications (9)

A new characterization approach to study the mechanical behavior of silicon nanowires

This work proposes a new approach to characterize the mechanical properties of nanowires based on a combination of nanomechanical measurements and models. Silicon nanowires with a critical dimension of 90 nm and a length of 8 mu m obtained through a monoli ...

SPRINGER HEIDELBERG2021

Strain-Induced Band Gap Engineering in Selectively Grown GaN-(Al,Ga)N Core-Shell Nanowire Heterostructures

Anna Fontcuberta i Morral, Luca Francaviglia

We demonstrate the selective area growth of GaN-(Al,Ga)N core shell nanowire heterostructures directly on Si(111). Photoluminescence spectroscopy on as-grown nanowires reveals a strong blueshift of the GaN band gap from 3.40 to 3.64 eV at room temperature. ...

American Chemical Society2016

Opto-spintronics in InP using ferromagnetic tunnel spin filters

Jean-Philippe Ansermet, Murari Soundararajan, Dongyoung Yoon, Christian Caspers

We demonstrate opto-spintronics using Fe-doped Indium Phosphide (InP). The method is based on optical orientation of InP conduction electron spins which are electrically detected in planar InP/oxide/Ni tunnel spin filters. We separate the optical excitatio ...

Institute of Physics (IoP) and Deutsche Physikalische Gesellschaft2015

Instrumental correction of the uneven PMT aging effect on the calibration constant of a water vapor Raman lidar

Bertrand Calpini, Valentin Simeonov

The water vapor profile derived from Raman lidar measurements is obtained by taking the ratio of water vapor and nitrogen Raman-shifted signals. The proportionality factor that converts the signal ratio to water vapor/air mixing ratio is referred to as lid ...

Spie-Int Soc Optical Engineering2014

Self-assembled quantum dots in a nanowire system for quantum photonics

Nicola Marzari, Anna Fontcuberta i Morral, Marco Cantoni, Martin Heiss, Eleonora Russo, Sonia Conesa Boj, Yannik Fontana, Bernt Ketterer

Quantum dots embedded within nanowires represent one of the most promising technologies for applications in quantum photonics. Whereas the top-down fabrication of such structures remains a technological challenge, their bottom-up fabrication through self-a ...

Nature Publishing Group2013

Compensation mechanism in silicon-doped gallium arsenide nanowires

Anna Fontcuberta i Morral, Emanuele Uccelli, Bernt Ketterer

P-type gallium arsenide nanowires were grown with different silicon doping concentrations. The incorporation is monitored by Raman spectroscopy of the local vibrational modes. For Si-concentrations up to 1.4 x 10(18) cm(-3), silicon incorporates mainly in ...

American Institute of Physics2010

MICROCRYSTALLINE SILICON SOLAR CELLS: EFFECT OF SUBSTRATE TEMPERATURE ON CRACKS

Christophe Ballif

Single junction microcrystalline silicon solar cells presently reach confirmed efficiencies up to 10.1%. Further improvement on device quality is now necessary to continuously increase the electrical performances of the solar cells. Zones of porous materia ...

2009

Medium-range structure of vitreous SiO2 obtained through first-principles investigation of vibrational spectra

Paolo Umari, Alfredo Pasquarello, Luigi Giacomazzi

Using a density-functional framework, we investigate the vibrational spectra of vitreous SiO2 to determine to what extent these spectra provide information about the medium-range structure of the oxide network. We carry out a comparative study involving th ...

2009

Dressed excitons within an incoherent electron gas: Observation of a Mollow triplet and an Autler-Townes doublet

Benoît Marie Joseph Deveaud, Marcia Portella Oberli, Jean Berney

We demonstrate that the interaction between excitons and a sea of incoherent electrons does not preclude excitons dressing by light. We investigate if exciton-electron scattering plays some inhibiting role in the coherent light-exciton coupling by measurin ...

2008