GaN-based superluminescent diodes with long lifetime

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Nanoribbons, nanometre-wide strips of a two-dimensional material, are a unique system in condensed matter. They combine the exotic electronic structures of low-dimensional materials with an enhanced number of exposed edges, where phenomena including ultral ...

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In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

A widely used component of high-efficiency perovskite solar cells (PSCs) is the molecular hole-transport material (HTM) spiro-OMeTAD. This organic solid needs to be p-doped to acquire sufficient hole conductivity. However, the conventional doping method us ...

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This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

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GaN-based superluminescent diodes with long lifetime

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Magnetically and optically active edges in phosphorene nanoribbons

Nonlinear optical diode effect in a magnetic Weyl semimetal

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

A model of electron beam neutralization for gyrotron simulations

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Light Emission and Conductance Fluctuations in Electrically Driven and Plasmonically Enhanced Molecular Junctions

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Photo-doping of spiro-OMeTAD for highly stable and efficient perovskite solar cells

HASPIDE: a project for the development of hydrogenated amorphous silicon radiation sensors on a flexible substrate

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Semiconductor-based device architectures in multimaterial fibers

Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Murunskite - a new class of functional material

Drift-Diffusion Simulations of Charge Transport and Trap Dynamics in Organic Semiconductor Materials

Layered metals as polarized transparent conductors

Interface connection of functionalized carbon nanotubes for efficient and stable perovskite solar cells