High-Performance CMOS SPAD-Based Sensors for Time-of-Flight PET Applications

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The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total ionizing dose has been proven, the resilience to 10161MeVneq/cm2 fluence ...

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We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

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The discovery of a large fab-to-fab variability in the TID response of the CMOS technologies used in the design of ASICs for the particle detectors of the HL-LHC triggered a monitoring effort to verify the consistency of the CMOS production process over ti ...

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Depleted Monolithic Active Pixel Sensor (DMAPS) sensors developed in the Tower Semiconductor 180 nm CMOS imaging process have been designed in the context of the ATLAS ITk upgrade Phase-II at the HL-LHC and for future collider experiments. The "MALTA-Czoch ...

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The Fast Discharge Units (FDUs) of the Superconducting (SC) Toroidal Field (TF) coils in the European demonstration fusion power plant DEMO warrant the machine integrity over its full lifetime against severe failure events, such as SC coil quenches or any ...

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High-Performance CMOS SPAD-Based Sensors for Time-of-Flight PET Applications

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Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

Mountaintop Gamma Ray Observations of Three Terrestrial Gamma‐Ray Flashes at the Säntis Tower, Switzerland With Coincident Radio Waveforms

Gamma noise to non-invasively monitor nuclear research reactors

Integrated electronics for time-of-flight positron emission tomography photodetectors

Eco-Conscious Approach to Wireless Gas Monitoring With a Hybrid Printed Passive Sensor Tag

Gamma-Blind Fast Neutron Detection for Spent Nuclear Fuel Characterization

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Attaining the PeV frontier of the cosmic ray spectrum in space with HERD

Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

Constraints on the intergalactic magnetic field from Fermi/LAT observations of the 'pair echo' of GRB 221009A

Measurement of the K+ → π+γγ decay

Computational Imaging SPAD Cameras

MALTA-Cz: a radiation hard full-size monolithic CMOS sensor with small electrodes on high-resistivity Czochralski substrate

High power electrostatic beam splitter for a proton beamline

DEMO toroidal field coil fast discharge unit integration studies

Integrated silicon photonic MEMS