Publication

Semiconductor defects at the 4H-SiC(0001)/SiO2 interface

Alfredo Pasquarello
2007
Journal Articles

Abstract

We study several semiconductor defects at the 4H-SiC(0 0 0 1)/SiO2 interface within a spin-polarized generalized-gradient density-functional approach for identifying candidate defects responsible for the high density of interface defects measured in the upper part of the 4H-SiC band gap. Using a model structure of the 4H-SiC(0 0 0 1)/SiO2 interface, we determine the energy levels of several defects with respect to the SiC band edges and identify the carbon interstitial as a possible candidate. (c) 2007 Elsevier B.V. All rights reserved.

Official source

https://infoscience.epfl.ch/entities/publication/98a45ba2-90a7-4930-93f0-2dfdaef2f41f

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Alfredo Pasquarello
2007
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/98a45ba2-90a7-4930-93f0-2dfdaef2f41f

About this result

Related concepts (5)

Electron mobility

In solid-state physics, the electron mobility characterises how quickly an electron can move through a metal or semiconductor when pulled by an electric field. There is an analogous quantity for holes, called hole mobility. The term carrier mobility refers in general to both electron and hole mobility. Electron and hole mobility are special cases of electrical mobility of charged particles in a fluid under an applied electric field. When an electric field E is applied across a piece of material, the electrons respond by moving with an average velocity called the drift velocity, .

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In solid-state physics and condensed matter physics, the density of states (DOS) of a system describes the number of modes per unit frequency range. The density of states is defined as , where is the number of states in the system of volume whose energies lie in the range from to . It is mathematically represented as a distribution by a probability density function, and it is generally an average over the space and time domains of the various states occupied by the system.

Current density

In electromagnetism, current density is the amount of charge per unit time that flows through a unit area of a chosen cross section. The current density vector is defined as a vector whose magnitude is the electric current per cross-sectional area at a given point in space, its direction being that of the motion of the positive charges at this point. In SI base units, the electric current density is measured in amperes per square metre. Assume that A (SI unit: m2) is a small surface centred at a given point M and orthogonal to the motion of the charges at M.