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Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

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Hints of the Photonic Nature of the Electromagnetic Fields in Classical Electrodynamics

Farhad Rachidi-Haeri, Marcos Rubinstein

Several recent publications show that the electromagnetic radiation generated by transmitting antennas satisfy the following universal conditions: The time domain radiation fields satisfy the condition A ≥ h/4π ⇒ q ≥ e where A is the action of the radiatio ...

2023

Single Chip Dynamic Nuclear Polarization Microsystems

Nergiz Sahin Solmaz

Nuclear magnetic resonance (NMR) methods are powerful tools employed in many fields, including physics, chemistry, material science, biology, and medicine. The use of NMR methodologies in an even wider range of applications is often hindered by the relativ ...

EPFL2023

Ultra-tunable bistable structures for universal robotic applications

Jamie Paik, Lei Wang, Ke Liu, Hongying Zhang

Bistable structures in nature are unparalleled for their fast response and force amplification even with the most minute physical stimula-tion. However, current works on bistable structures mainly focus on their stable states, while promising intermediate ...

CELL PRESS2023

Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

Farzan Jazaeri

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is con ...

PERGAMON-ELSEVIER SCIENCE LTD2023

Molecularly Tailored Surface Defect Modifier for Efficient and Stable Perovskite Solar Cells

Michael Graetzel, Shaik Mohammed Zakeeruddin, Yelin Hu, Hongwei Zhu, Zhongjin Shen, Jialin Wang

Surface defects cause non-radiative charge recombination and reduce the photovoltaic performance of perovskite solar cells (PSCs), thus effective passivation of defects has become a crucial method for achieving efficient and stable devices. Organic ammoniu ...

WILEY-V C H VERLAG GMBH2023

Analysis and Design for Medium Voltage Dual Active Bridge Converter Based on Series-Connected SiC MOSFETs

Chengmin Li

In this article, a series-connected SiC MOSFETs-based medium voltage (MV) dual active bridge (DAB) converter featuring a lowvoltage difference amongdevices and high efficiency is proposed. In the developed DAB converter, the zero voltage switching-on chara ...

Ieee-Inst Electrical Electronics Engineers Inc2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

Vacancy segregation and intrinsic coordination defects at (111) twist grain boundaries in diamond

Carolina Baruffi

High radiation damage resistance has become increasingly important for applications of functional materials in harsh environments. The high radiation damage resistance diamond cubic carbon is a unique material which is considered for radiation environments ...

Pergamon-Elsevier Science Ltd2023

The X-Point radiating regime at ASDEX Upgrade and TCV

Holger Reimerdes, Christian Gabriel Theiler, Marco Wischmeier, Umar Sheikh, Artur Perek

Future fusion reactors require a safe, steady-state divertor operation. With deep divertor detachment, which is typically induced by impurity seeding, the radiation concentrates in a small region at the X-point or on closed flux surfaces above the X-point. ...

Elsevier2023

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Thomas Hagger, Anna Fontcuberta i Morral, Andrea Giunto

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

AMER PHYSICAL SOC2023

Robust Analog Multisensory Array System for Lossy Capacitive Sensors Over Long Distances

Sandro Carrara, Amar Kapic

A robust capacitive multisensory readout system is presented in this article. The system consists of a few thousand lossy capacitive-based sensors that can be modeled as a parallel connection of sensor capacitor and undesirable leakage resistance. The real ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2023

Method and setup for light detection and ranging

Tobias Kippenberg, Johann Emmeram Riemensberger, Anton Lukashchuk

A method and a setup for light detection and ranging are disclosed. The setup is configured to carry out the following method: generating signal radiation (S) at multiple signal frequencies (fs) with an optical signal source (1), wherein the signal radiati ...

2023

Correlated insulator collapse due to quantum avalanche via in-gap ladder states

Xi Chen, Camille Didier Georges Aron

The significant discrepancy observed between the predicted and experimental switching fields in correlated insulators under a DC electric field far-from-equilibrium necessitates a reevaluation of current microscopic understanding. Here we show that an elec ...

Nature Portfolio2023