Publication

Optimization of large area YBa2Cu3O7-x films by single target ion beam sputtering

Davor Pavuna
1991
Journal Articles

Abstract

The authors report on the in-situ growth over large area of high-quality homogeneous YBa2Cu3O7-x films by single target ion beam sputtering. The 123 stoichiometry transfer to the substrates is obtained by using sufficiently low power ion beams and a grazing angle between the ion beam and the target. The as-deposited films show consistent homogeneity and reproducible superconducting properties (ΔTc106 A cm-2 at 77 K) over areas larger than ≈30 cm2

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Davor Pavuna
1991
Journal Articles

Abstract

Official source

Related concepts (29)

Ion beam

An ion beam is a type of charged particle beam consisting of ions. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. A variety of ion beam sources exists, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most common ion beams are of singly-charged ions. Ion current density is typically measured in mA/cm^2, and ion energy in eV.

Ion source

An ion source is a device that creates atomic and molecular ions. Ion sources are used to form ions for mass spectrometers, optical emission spectrometers, particle accelerators, ion implanters and ion engines. Electron ionization Electron ionization is widely used in mass spectrometry, particularly for organic molecules. The gas phase reaction producing electron ionization is M{} + e^- -> M^{+\bullet}{} + 2e^- where M is the atom or molecule being ionized, e^- is the electron, and M^{+\bullet} is the resulting ion.

Ion implantation

Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions differ in composition from the target) if they stop and remain in the target.

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