PiezoelectricityPiezoelectricity (ˌpiːzoʊ-,_ˌpiːtsoʊ-,_paɪˌiːzoʊ-, piˌeɪzoʊ-,_piˌeɪtsoʊ-) is the electric charge that accumulates in certain solid materials—such as crystals, certain ceramics, and biological matter such as bone, DNA, and various proteins—in response to applied mechanical stress. The word piezoelectricity means electricity resulting from pressure and latent heat. It is derived (an ancient source of electric current). The piezoelectric effect results from the linear electromechanical interaction between the mechanical and electrical states in crystalline materials with no inversion symmetry.
I-beamI-beam is a generic lay term for a variety of structural members with an or -shaped cross-section. Technical terms for similar items include H-beam (for universal column, UC), w-beam (for "wide flange"), universal beam (UB), rolled steel joist (RSJ), or double-T (especially in Polish, Bulgarian, Spanish, Italian and German). I-beams are typically made of structural steel and serve a wide variety of construction uses. The horizontal elements of the are called flanges, and the vertical element is known as the "web".
ElectrodeAn electrode is an electrical conductor used to make contact with a nonmetallic part of a circuit (e.g. a semiconductor, an electrolyte, a vacuum or air). Electrodes are essential parts of batteries that can consist of a variety of materials depending on the type of battery. The electrophore, invented by Johan Wilcke, was an early version of an electrode used to study static electricity. Electrodes are an essential part of any battery. The first electrochemical battery made was devised by Alessandro Volta and was aptly named the Voltaic cell.
Reference electrodeA reference electrode is an electrode that has a stable and well-known electrode potential. The overall chemical reaction taking place in a cell is made up of two independent half-reactions, which describe chemical changes at the two electrodes. To focus on the reaction at the working electrode, the reference electrode is standardized with constant (buffered or saturated) concentrations of each participant of the redox reaction. There are many ways reference electrodes are used.
Thin-film bulk acoustic resonatorA thin-film bulk acoustic resonator (FBAR or TFBAR) is a device consisting of a piezoelectric material manufactured by thin film methods between two conductive – typically metallic – electrodes and acoustically isolated from the surrounding medium. The operation is based on the piezoelectricity of the piezolayer between the electrodes. FBAR devices using piezoelectric films with thicknesses ranging from several micrometres down to tenths of micrometres resonate in the frequency range of 100 MHz to 20 GHz.
Electronic componentAn electronic component is any basic discrete electronic device or physical entity part of an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components and elements. Electronic components have a number of electrical terminals or leads.
Standard hydrogen electrodeIn electrochemistry, the standard hydrogen electrode (abbreviated SHE), is a redox electrode which forms the basis of the thermodynamic scale of oxidation-reduction potentials. Its absolute electrode potential is estimated to be 4.44 ± 0.02 V at 25 °C, but to form a basis for comparison with all other electrochemical reactions, hydrogen's standard electrode potential (E°) is declared to be zero volts at any temperature. Potentials of all other electrodes are compared with that of the standard hydrogen electrode at the same temperature.
MEMSMEMS (Microelectromechanical systems) is the technology of microscopic devices incorporating both electronic and moving parts. MEMS are made up of components between 1 and 100 micrometres in size (i.e., 0.001 to 0.1 mm), and MEMS devices generally range in size from 20 micrometres to a millimetre (i.e., 0.02 to 1.0 mm), although components arranged in arrays (e.g., digital micromirror devices) can be more than 1000 mm2.
Error functionIn mathematics, the error function (also called the Gauss error function), often denoted by erf, is a complex function of a complex variable defined as: Some authors define without the factor of . This nonelementary integral is a sigmoid function that occurs often in probability, statistics, and partial differential equations. In many of these applications, the function argument is a real number. If the function argument is real, then the function value is also real.
Beam (structure)A beam is a structural element that primarily resists loads applied laterally to the beam's axis (an element designed to carry primarily axial load would be a strut or column). Its mode of deflection is primarily by bending. The loads applied to the beam result in reaction forces at the beam's support points. The total effect of all the forces acting on the beam is to produce shear forces and bending moments within the beams, that in turn induce internal stresses, strains and deflections of the beam.
Vibration isolationVibration isolation is the process of isolating an object, such as a piece of equipment, from the source of vibrations. Vibration is undesirable in many domains, primarily engineered systems and habitable spaces, and methods have been developed to prevent the transfer of vibration to such systems. Vibrations propagate via mechanical waves and certain mechanical linkages conduct vibrations more efficiently than others. Passive vibration isolation makes use of materials and mechanical linkages that absorb and damp these mechanical waves.
DistortionIn signal processing, distortion is the alteration of the original shape (or other characteristic) of a signal. In communications and electronics it means the alteration of the waveform of an information-bearing signal, such as an audio signal representing sound or a video signal representing images, in an electronic device or communication channel. Distortion is usually unwanted, and so engineers strive to eliminate or minimize it. In some situations, however, distortion may be desirable.
Gamma functionIn mathematics, the gamma function (represented by Γ, the capital letter gamma from the Greek alphabet) is one commonly used extension of the factorial function to complex numbers. The gamma function is defined for all complex numbers except the non-positive integers. For every positive integer n, Derived by Daniel Bernoulli, for complex numbers with a positive real part, the gamma function is defined via a convergent improper integral: The gamma function then is defined as the analytic continuation of this integral function to a meromorphic function that is holomorphic in the whole complex plane except zero and the negative integers, where the function has simple poles.
Standard electrode potentialIn electrochemistry, standard electrode potential , or , is a measure of the reducing power of any element or compound. The IUPAC "Gold Book" defines it as: "the value of the standard emf (electromotive force) of a cell in which molecular hydrogen under standard pressure is oxidized to solvated protons at the left-hand electrode". The basis for an electrochemical cell, such as the galvanic cell, is always a redox reaction which can be broken down into two half-reactions: oxidation at anode (loss of electron) and reduction at cathode (gain of electron).
Silicon controlled rectifierA silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M.
