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Comparison of two optimized readout chains for low light CIS

Related publications (32)

Wireless neuromodulation with porous silicon

Wireless optoelectronic devices are fabricated by controlling the porosity of p-type silicon, enabling in vivo efficient, non-genetic optoelectronic modulation of peripheral nerve activity. ...

NATURE PORTFOLIO2022

Strained crystalline nanomechanical resonators with quality factors above 10 billion

Tobias Kippenberg, Sergey Fedorov, Nils Johan Engelsen, Alberto Beccari

In strained mechanical resonators, the concurrence of tensile stress and geometric nonlinearity dramatically reduces dissipation. This phenomenon, called dissipation dilution, is employed in mirror suspensions of gravitational-wave interferometers and at t ...

NATURE PORTFOLIO2022

Effect of Native Oxide on Stress in Silicon Nanowires: Implications for Nanoelectromechanical Systems

Yusuf Leblebici, Zuhal Tasdemir, Mohammad Nasr Esfahani

Understanding the origins of intrinsic stress in Si nanowires (NWs) is crucial for their successful utilization as transducer building blocks in next-generation, miniaturized sensors based on nanoelectromechanical systems (NEMS). With their small size lead ...

AMER CHEMICAL SOC2022

The role of Encapsulants in the long-term performance of advanced Crystalline Silicon Glass-Glass PV modules

Luca Gnocchi

The adoption of crystalline silicon (c-Si) PV modules based on glass-glass (G-G) structures is gaining momentum because of the possibility to manufacture bifacial panels, collecting light from the rear side. Despite not being an optimal material, Ethylene ...

EPFL2022

Liquid metal infiltration of silicon based alloys into porous carbonaceous materials. Part II: Experimental verification of modelling approaches by infiltration of Si-Zr alloy into idealized microchannels

Ludger Weber, Giovanni Bianchi, Alberto Ortona, Manoj Kondibhau Naikade, Caroline Hain

In this work, the mechanisms leading to the pore closure in reactive melt infiltration (RMI) of carbon by pure silicon and a near eutectic Si-8 at-pct Zr alloy at 1500 and 1700 degrees C under vacuum were studied. Various geometrical configurations of micr ...

ELSEVIER SCI LTD2022

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

EPFL2022

Medipix4, a high granularity four sides buttable pixel readout chip for high resolution spectroscopic X-ray imaging at rates compatible with medical CT scans

Viros Sriskaran

Medipix4 is the latest member in the Medipix/Timepix family of pixel detector chips aimed at high rate spectroscopic X-ray imaging using high-Z materials. The chip address the limitations of conventional hybrid pixel detectors for X-ray imaging. Its predec ...

EPFL2022

New metric for carrier selective contacts for silicon heterojunction solar cells

Mathieu Gérard Boccard, Jakub Holovsky

Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest re ...

PERGAMON-ELSEVIER SCIENCE LTD2022

Three-dimensional in situ imaging of single-grain growth in polycrystalline In2O3:Zr films

Quentin Thomas Jeangros, Michael Elias Stückelberger, Monica Morales Masis

Understanding grain morphology and kinetics of solid-phase crystallization is important for controlling the functional properties of polycrystalline materials. Here, in situ coherent X-ray diffraction imaging and transmission electron microscopy elucidate ...

SPRINGERNATURE2022

Localisation of front side passivating contacts for direct metallisation of high-efficiency c-Si solar cells

Christophe Ballif, Sylvain Nicolay, Xavier Niquille, Franz-Josef Haug, Frank Meyer, Andrea Ingenito

In this work, we present the development of passivating contacts based on thin interfacial oxide/doped polysilicon for two side contacted c-Si solar cells. In the first part, we discuss our layer optimization towards direct metallisation, using firing thro ...

ELSEVIER2022

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Carlotta Gastaldi

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

EPFL2022