Publication

Size-effect in mesoscopic epitaxial ferroelectric structures: Increase of piezoelectric response with decreasing feature-size

Paul Muralt, Jacek Baborowski
2002
Journal Articles

Abstract

Epitaxial 50 nm and 200 nm thick films of Pb(Zr0.40Ti0.60)O-3 (PZT) have been deposited by reactive rf magnetron sputtering on conductive Nb-doped SrTiO3(100) (STO). The patterning process involved electron beam lithography of polymethylmethacrylate (PMMA), fabrication of a 75 nm thick Cr hard mask layer by means of a lift off process, and dry etching of PZT. The smallest PZT features obtained by means of this process were 50 nm in lateral dimensions. Piezoelectric sensitive scanning force microscopy in the contact mode revealed a strong increase of the piezoelectric response for feature sizes with lateral dimensions below 300 nm (200 nm film). It is proposed that this behavior is mainly due to vanishing a-domains.

Official source

https://infoscience.epfl.ch/entities/publication/8957b74b-e90b-4412-addf-d61da5aed8af

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Paul Muralt, Jacek Baborowski
2002
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/8957b74b-e90b-4412-addf-d61da5aed8af

About this result

Related concepts (27)

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Plasma etching is a form of plasma processing used to fabricate integrated circuits. It involves a high-speed stream of glow discharge (plasma) of an appropriate gas mixture being shot (in pulses) at a sample. The plasma source, known as etch species, can be either charged (ions) or neutral (atoms and radicals). During the process, the plasma generates volatile etch products at room temperature from the chemical reactions between the elements of the material etched and the reactive species generated by the plasma.

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Size-effect in mesoscopic epitaxial ferroelectric structures: Increase of piezoelectric response with decreasing feature-size

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