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Erbium amplifiers enable low-noise, crosstalk-free optical communication. Recent advances in on-chip Erbium-doped amplifiers using ion implantation have enabled Er based gain in low loss silicon nitride waveguides, with scalable manufacturing that is foundry compatible. I will discuss both amplifiers (with > 200 mW of output power), lasers (fully C-L band tunable), as well as mode locked lasers with 100 pJ pulse energy based on this technology.