Publications related to Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier

Related publications (32)

Low-temperature thermite reaction to form oxygen vacancies in metal-oxide semiconductors: A case study of photoelectrochemical cells

Michael Graetzel, Kevin Sivula, Likai Zheng

The formation of oxygen vacancies (Vö) in n-type semiconductors is a key strategy for improving the performance of metal-oxide-based photoanodes. Whereas Vö has traditionally been created by gas- or liquid-phase treatments, here we report a solid-state red ...

2025

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Active Voltage Balancing with Seamless Integration into Dual Gate Driver for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

The versatility of half-bridge configuration of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module contributes to its widespread adoption, highlighting the popularity and significance of its corresponding dual gat ...

2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Wenfeng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Strain relaxation and multidentate anchoring in n-type perovskite transistors and logic circuits

Mohammad Khaja Nazeeruddin, Olga Syzgantseva

The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm2 V-1 s-1. However, due to their background hole doping, these perovskites are not suitable for n-type transistors. Ambipol ...

Nature Portfolio2024

A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs

Drazen Dujic, Rui Wang

Dual-channel gate driver is commonly utilized in the industry for accommodating the widespread use of half-bridge power modules. As wide-bandgap devices become increasingly prevalent due to their superior switching characteristics compared with conventiona ...

2024

SPAD Developed in 55 nm Bipolar-CMOS-DMOS Technology Achieving Near 90% Peak PDP

Edoardo Charbon, Claudio Bruschini, Francesco Gramuglia, Myung Jae Lee, Ekin Kizilkan, Pouyan Keshavarzian, Won Yong Ha

We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, the SPAD junctio ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Lithium tantalate photonic integrated circuits for volume manufacturing

Tobias Kippenberg, Johann Emmeram Riemensberger, Mikhail Churaev, Xinru Ji, Zihan Li, Terence Albert Emile Blésin, Chengli Wang, Junyin Zhang, Xi Wang, Chen Yang, Wil Kao, Alisa Davydova

Electro-optical photonic integrated circuits (PICs) based on lithium niobate (LiNbO3) have demonstrated the vast capabilities of materials with a high Pockels coefficient1,2. They enable linear and high-speed modulators operating at complementary metal–oxi ...

2024

Light-Intensity Switching of Graphene/WSe2 Synaptic Devices

Giulia Tagliabue, Tarique Anwar, Hongyu Tang

2D van der Waals heterojunctions (vdWH) have emerged as an attractive platform for the realization of optoelectronic synaptic devices, which are critical for energy-efficient computing systems. Photogating induced by charge traps at the interfaces indeed r ...

Wiley2024

Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

Ekin Kizilkan

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

EPFL2024

Contemporary Logic Synthesis: with an Application to AQFP Circuit Optimization

Siang-Yun Lee

Electronic devices play an irreplaceable role in our lives. With the tightening time to market, exploding demand for computing power, and continuous desire for smaller, faster, less energy-consuming, and lower-cost chips, computer-aided design for electron ...

EPFL2024

Polarization-enhanced GaN Schottky barrier diodes: Ultra-thin InGaN for high breakdown voltage and low Ron

Elison de Nazareth Matioli, Alessandro Floriduz, Zheng Hao

In this work, we present a concept that leverages the strong piezoelectric polarization field in InGaN, which counteracts the external electric field at reverse bias. We show that despite the smaller InGaN band-gap and lower critical electric field, its st ...

2024

A Gradient-Gated SPAD Array for Non-Line-of-Sight Imaging

Edoardo Charbon, Francesco Gramuglia, Myung Jae Lee, Pouyan Keshavarzian, Jiuxuan Zhao

Time-resolved non-line-of-sight (NLOS) imaging based on single-photon avalanche diode (SPAD) detectors have demonstrated impressive results in recent years. To acquire adequate number of indirect photons from a hidden scene in the presence of overwhelming ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Phase Shift Angle Segmentation Modulation for Soft-Switching Medium-Voltage DAB Converter With Series-Connected SiC MOSFETs

Chengmin Li

The medium-voltage (MV) dual active bridge (DAB) converter with series-connected SiC (S-SiC) MOSFETs is a promising solution for high-power-density isolated dc/dc converter. To improve the voltage sharing and reliability of S-SiC, relatively large snubber ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Controlling On-Surface Photoactivity: The Impact of π-Conjugation in Anhydride-Functionalized Molecules on a Semiconductor Surface

Christian Wäckerlin

On-surface synthesis has become a prominent method for growing low-dimensional carbon-based nanomaterials on metal surfaces. However, the necessity of decoupling organic nanostructures from metal substrates to exploit their properties requires either trans ...

Wiley-VCH Verlag GmbH2024

An Ultralow-Power Triaxial MEMS Accelerometer With High-Voltage Biasing and Electrostatic Mismatch Compensation

Kyojin Choo

This article presents a triaxial micro electromechani-cal system (MEMS) capacitive accelerometer using a high-voltage biasing technique to achieve high resolution with ultralow power. The accelerometer system generates a differential pair of high voltages ...

Ieee-Inst Electrical Electronics Engineers Inc2024

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Sadegh Kamaei Bahmaei

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

EPFL2023

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Matteo Cucchi

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

WILEY-V C H VERLAG GMBH2023

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Andras Kis, Oleg Yazyev, Ahmet Avsar, Zhenyu Wang, Yanfei Zhao, Mukesh Kumar Tripathi, Kristians Cernevics, Juan Francisco Gonzalez Marin, Cheol Yeon Cheon, Hyungoo Ji

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Nature Research2023