Publication

Epitaxial growth of GeTe/Sb2Te3 superlattices

Rui Ning Wang
2022
Journal Articles

Abstract

In the quest for superlattices with engineered interfaces for disruptive applications such as neuromorphic computing, we present a dedicated study on the epitaxial growth of nominal GeTe/Sb2Te3 chalcogenide superlattices (CSL) on the Sb passivated Si(111) - (root 3 x root 3)R30 degrees - Sb surface. Intermixing at the GeTe and Sb2Te3 interface is assessed by X-Ray diffraction and reflectivity. A new growth procedure with element flux interruptions is proposed to engineer the degree of intermixing and the tailoring of the GeSbTe layers into Sb-rich compositions.

Official source

https://infoscience.epfl.ch/entities/publication/87f566e0-06c5-4797-bb30-4cabc7bbceff

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Epitaxial growth of GeTe/Sb2Te3 superlattices

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