Transmission mediumA transmission medium is a system or substance that can mediate the propagation of signals for the purposes of telecommunication. Signals are typically imposed on a wave of some kind suitable for the chosen medium. For example, data can modulate sound, and a transmission medium for sounds may be air, but solids and liquids may also act as the transmission medium. Vacuum or air constitutes a good transmission medium for electromagnetic waves such as light and radio waves.
Faraday effectThe Faraday effect or Faraday rotation, sometimes referred to as the magneto-optic Faraday effect (MOFE), is a physical magneto-optical phenomenon. The Faraday effect causes a polarization rotation which is proportional to the projection of the magnetic field along the direction of the light propagation. Formally, it is a special case of gyroelectromagnetism obtained when the dielectric permittivity tensor is diagonal. This effect occurs in most optically transparent dielectric materials (including liquids) under the influence of magnetic fields.
Interferometric visibilityThe interferometric visibility (also known as interference visibility and fringe visibility, or just visibility when in context) is a measure of the contrast of interference in any system subject to wave superposition. Examples include as optics, quantum mechanics, water waves, sound waves, or electrical signals. Visibility is defined as the ratio of the amplitude of the interference pattern to the sum of the powers of the individual waves. The interferometric visibility gives a practical way to measure the coherence of two waves (or one wave with itself).
Compton wavelengthThe Compton wavelength is a quantum mechanical property of a particle, defined as the wavelength of a photon whose energy is the same as the rest energy of that particle (see mass–energy equivalence). It was introduced by Arthur Compton in 1923 in his explanation of the scattering of photons by electrons (a process known as Compton scattering). The standard Compton wavelength λ of a particle is given by while its frequency f is given by where h is the Planck constant, m is the particle's proper mass, and c is the speed of light.
Michelson interferometerThe Michelson interferometer is a common configuration for optical interferometry and was invented by the 19/20th-century American physicist Albert Abraham Michelson. Using a beam splitter, a light source is split into two arms. Each of those light beams is reflected back toward the beamsplitter which then combines their amplitudes using the superposition principle. The resulting interference pattern that is not directed back toward the source is typically directed to some type of photoelectric detector or camera.
Nonlinear opticsNonlinear optics (NLO) is the branch of optics that describes the behaviour of light in nonlinear media, that is, media in which the polarization density P responds non-linearly to the electric field E of the light. The non-linearity is typically observed only at very high light intensities (when the electric field of the light is >108 V/m and thus comparable to the atomic electric field of ~1011 V/m) such as those provided by lasers. Above the Schwinger limit, the vacuum itself is expected to become nonlinear.
Kerr effectThe Kerr effect, also called the quadratic electro-optic (QEO) effect, is a change in the refractive index of a material in response to an applied electric field. The Kerr effect is distinct from the Pockels effect in that the induced index change is directly proportional to the square of the electric field instead of varying linearly with it. All materials show a Kerr effect, but certain liquids display it more strongly than others. The Kerr effect was discovered in 1875 by Scottish physicist John Kerr.
Silicon on sapphireSilicon on sapphire (SOS) is a hetero-epitaxial process for metal–oxide–semiconductor (MOS) integrated circuit (IC) manufacturing that consists of a thin layer (typically thinner than 0.6 μm) of silicon grown on a sapphire (Al2O3) wafer. SOS is part of the silicon-on-insulator (SOI) family of CMOS (complementary MOS) technologies. Typically, high-purity artificially grown sapphire crystals are used. The silicon is usually deposited by the decomposition of silane gas (SiH4) on heated sapphire substrates.
Silicon–germaniumSiGe (ˈsɪɡiː or ˈsaɪdʒiː), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture.
Matter waveMatter waves are a central part of the theory of quantum mechanics, being half of wave–particle duality. All matter exhibits wave-like behavior. For example, a beam of electrons can be diffracted just like a beam of light or a water wave. The concept that matter behaves like a wave was proposed by French physicist Louis de Broglie (dəˈbrɔɪ) in 1924, and so matter waves are also known as de Broglie waves.
Path lossPath loss, or path attenuation, is the reduction in power density (attenuation) of an electromagnetic wave as it propagates through space. Path loss is a major component in the analysis and design of the link budget of a telecommunication system. This term is commonly used in wireless communications and signal propagation. Path loss may be due to many effects, such as free-space loss, refraction, diffraction, reflection, aperture-medium coupling loss, and absorption.
Bipolar junction transistorA bipolar junction transistor (BJT) is a type of transistor that uses both electrons and electron holes as charge carriers. In contrast, a unipolar transistor, such as a field-effect transistor (FET), uses only one kind of charge carrier. A bipolar transistor allows a small current injected at one of its terminals to control a much larger current flowing between the terminals, making the device capable of amplification or switching. BJTs use two p–n junctions between two semiconductor types, n-type and p-type, which are regions in a single crystal of material.
