Gradient flow emulation using drift diffusion processes

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Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

Mihai Adrian Ionescu, Emanuele Andrea Casu, Matteo Cavalieri, Nicolò Oliva

We propose and experimentally demonstrate double-gated n-type WSe 2 FETs with excellent top gate high-k dielectric layer. Under back gate control, the devices behave as n-type enhancement transistors, with ON/OFF current ratios larger than 6 orders of magn ...

IEEE2018

Doping-Free Complementary Logic Gates Enabled by Two-Dimensional Polarity-Controllable Transistors

Giovanni De Micheli, Giovanni Vincenzo Resta, Pierre-Emmanuel Julien Marc Gaillardon

Atomically thin two-dimensional (2D) materials belonging to transition metal dichalcogenides, due to their physical and electrical properties, are an exceptional vector for the exploration of next-generation semiconductor devices. Among them, due to the po ...

2018

Volatile two-dimensional electron gas in ultrathin BaTiO3 films

Marco Grioni, Simon Karl Moser, Luca Moreschini, Sara Fatale

We investigate the metallic surface state in ultrathin films of BaTiO3 by angle-resolved photoemission spectroscopy. We find Fermi-surface contours derived from the Ti 3d t(2g) conduction band, similar as in SrTiO3 but with broader spectral features due to ...

AMER PHYSICAL SOC2018

Dynamics of Electronic and Ionic Charges in Cyanine Organic Semiconductor Devices

Sandra Christina Jenatsch

Organic semiconductor materials have been widely applied in optoelectronic devices to replace their inorganic counterparts and explore new fields of applications. Due to their high extinction coefficients, chemical tunability and solubility, cyanine dyes a ...

EPFL2017

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

Cem Alper

The semiconductor industry, governed by the Moore's law, has achieved the almost unbelievable feat of exponentially increasing performance while lowering the costs for years. The main enabler for this achievement has been the scaling of the CMOS transistor ...

EPFL2017

Field-induced charge separation dynamics in monolayer MoS2

Andras Kis, Dumitru Dumcenco, Dmitry Ovchinnikov, Yen-Cheng Kung

The absorption spectra of 2D semiconductors are dominated by excitons with binding energy of several hundreds of meV. Nevertheless, even single layers show an appreciable photovoltaic effect and work as the active material in high sensitivity photodetector ...

Iop Publishing Ltd2017

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Ahmet Avsar

Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron's spin. Although graphene is very promising for spin communication due to its extraordinary electron mobility, the lac ...

Nature Publishing Group2017

A Time-Resolved Photophysical Study of Hybrid Organic-Inorganic Perovskite Photovoltaic Materials

Arun Aby Paraecattil

The search for new photovoltaic materials has been driven by the combined need to exploit sources of energy that are clean and sustainable, while simultaneously doing it in a cost effective manner. In this light, hybrid organic-inorganic perovskites have r ...

EPFL2017

Synthesis of Cyanine Polyelectrolytes and Anions for Organic Electronic Devices

Lei Wang, Lei Wang

Many practical applications among organic electronic devices have been demonstrated over the last decades. They are considered as promising alternatives to inorganic semiconductor technologies due to the potential of cost-effective fabrication, excellent p ...

EPFL2017

Doping Evolution and Junction Formation in Stacked Cyanine Dye Light-Emitting Electrochemical Cells

Lei Wang

Cyanine dyes are fluorescent organic salts with intrinsic conductivity for ionic and electronic charges. Recently (J. Am. Chem. Soc. 2013, 135, 18008-18011), these features have been exploited in cyanine light-emitting electrochemical cells (LECs). Here, w ...

Amer Chemical Soc2016

Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy

Nicolas Grandjean, Denis Martin, Marco Malinverni

We grew heavily Mg-doped GaN using ammonia molecular-beam epitaxy. The use of low growth temperature (740 degrees C) allows decreasing the incorporation of donor-like defects (

Amer Inst Physics2016