Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers

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GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

Suspended epitaxial gallium nitride (GaN) on silicon (Si) photonic crystal devices suffer from large residual tensile strain, especially for long waveguides, because fine structures tend to crack due to large stress. By introducing spring-like tethers, des ...

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Stress control in GaN/sapphire templates for the fabrication of crack-free thick layers

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Toughening of thick bonded interfaces through architected crack-arresting features

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Strain engineering and strain measurement by spring tethers on suspended epitaxial GaN-on-Si photonic crystal devices

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A novel fatigue life prediction methodology based on energy dissipation in viscoelastic materials, synergistic effects of stress level, stress ratio, and temperature

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Thermo-hydro-mechanical analysis of the complete lifetime of the bentonite barrier in the FEBEX in-situ test

A low-temperature prismatic slip instability in Mg understood using machine learning potentials

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