Publication

Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides

Alfredo Pasquarello, Paolo Umari
2004
Journal Articles

Abstract

We investigate the dielectric permittivity of SiO2 on Si(100) substrates using a first-principles approach. It is shown that both the static and high-frequency dielectric constants of the oxide overlayer increase when the oxide thickness is reduced. This behavior of the overlayer is found to be well reproduced by a classical two-layer model in which the pure oxide and the suboxide layer are treated as distinct dielectrics. Implications for interfaces between silicon and high-k gate oxides are discussed. (C) 2004 Elsevier B.V. All rights reserved.

Official source

https://infoscience.epfl.ch/entities/publication/7e7cc042-ef8a-4290-ab92-557a95bc047b

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Alfredo Pasquarello, Paolo Umari
2004
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/7e7cc042-ef8a-4290-ab92-557a95bc047b

About this result

Related concepts (32)

Dielectric

In electromagnetism, a dielectric (or dielectric medium) is an electrical insulator that can be polarised by an applied electric field. When a dielectric material is placed in an electric field, electric charges do not flow through the material as they do in an electrical conductor, because they have no loosely bound, or free, electrons that may drift through the material, but instead they shift, only slightly, from their average equilibrium positions, causing dielectric polarisation.

High-κ dielectric

In the semiconductor industry, the term high-κ dielectric refers to a material with a high dielectric constant (κ, kappa), as compared to silicon dioxide. High-κ dielectrics are used in semiconductor manufacturing processes where they are usually used to replace a silicon dioxide gate dielectric or another dielectric layer of a device. The implementation of high-κ gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components, colloquially referred to as extending Moore's Law.

Relative permittivity

The relative permittivity (in older texts, dielectric constant) is the permittivity of a material expressed as a ratio with the electric permittivity of a vacuum. A dielectric is an insulating material, and the dielectric constant of an insulator measures the ability of the insulator to store electric energy in an electrical field. Permittivity is a material's property that affects the Coulomb force between two point charges in the material. Relative permittivity is the factor by which the electric field between the charges is decreased relative to vacuum.

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Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides

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