Publication

Low-temperature and hydrogen-free silicon dioxide cladding for next-generation integrated photonics

Tobias Kippenberg, Anat Siddharth, Xinru Ji, Zheru Qiu, Zihan Li, Marta Divall
2024

Abstract

We demonstrate a process for hydrogen-free low-loss silicon oxide (SiO2) films deposited using S iCl4 and O 2 as precursors. A wide low-loss window from 1260 nm to 1625 nm is achieved at a deposition temperature of 300 ◦C, essential for next generation photonic integrated circuits.

Official source

https://infoscience.epfl.ch/entities/publication/7c5b44c6-465b-4633-a428-d8308c3b9116

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Low-temperature and hydrogen-free silicon dioxide cladding for next-generation integrated photonics

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