Low-temperature and hydrogen-free silicon dioxide cladding for next-generation integrated photonics

We demonstrate a process for hydrogen-free low-loss silicon oxide (SiO2) films deposited using S iCl4 and O 2 as precursors. A wide low-loss window from 1260 nm to 1625 nm is achieved at a deposition temperature of 300 ◦C, essential for next generation photonic integrated circuits.