Publication

Optimized Band-Structure Design of Ingaasp Braqwet Structures

Marc-André Dupertuis
1995
Journal Articles

Abstract

We developed InGaAsP BRAQWET (barrier, reservoir, and quantum-well electron transfer) structures using numerical modeling to optimize the band structure. The main improvement was achieved by including i,n,i,p-doped layers in the barrier, thus decoupling the quantum-well (QW) from the electric field in the barrier, The optimized structures show increased QW movement with applied bias, QW level close to the Fermi level at zero bias, low leakage current and low sensitivity to fabrication tolerances, such as layer thickness and doping levels. The new structures should show improved performance and be easier to manufacture due to their higher tolerances. BRAQWET structures were grown according to the new design by CBE and show low leakage current (10mA/cm(2)) and typical band-filling effects at lambda=1.51 mu m, making them potentially suitable for high-performance modulators.

Official source

https://infoscience.epfl.ch/entities/publication/76fce5cf-191b-4a26-a508-bd2d235f1f42

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Marc-André Dupertuis
1995
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/76fce5cf-191b-4a26-a508-bd2d235f1f42

About this result

Related concepts (32)

Fermi energy

The Fermi energy is a concept in quantum mechanics usually referring to the energy difference between the highest and lowest occupied single-particle states in a quantum system of non-interacting fermions at absolute zero temperature. In a Fermi gas, the lowest occupied state is taken to have zero kinetic energy, whereas in a metal, the lowest occupied state is typically taken to mean the bottom of the conduction band. The term "Fermi energy" is often used to refer to a different yet closely related concept, the Fermi level (also called electrochemical potential).

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Fermi level

The Fermi level of a solid-state body is the thermodynamic work required to add one electron to the body. It is a thermodynamic quantity usually denoted by μ or EF for brevity. The Fermi level does not include the work required to remove the electron from wherever it came from. A precise understanding of the Fermi level—how it relates to electronic band structure in determining electronic properties; how it relates to the voltage and flow of charge in an electronic circuit—is essential to an understanding of solid-state physics.

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Optimized Band-Structure Design of Ingaasp Braqwet Structures

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