Recent progress in wafer-fused VECSELs emitting in the 1310 nm waveband

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Related publications (30)

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Photosensitivity and luminescence of chromium and bismuth doped fibers

Optical fiber materials with broad-band gain in the visible or in the telecommunication window are of great interest for optical communication or the biomedical domain in order to built integrated tunable lasers, amplifiers, ultra-short pulse lasers, or br ...

EPFL2009

Analysis and Control of Optical Modes in VCSELs and VCSEL-Arrays

Elodie Lamothe

In this thesis, we studied the modal structure and the polarization of the optical field emitted by vertical-cavity surface-emitting lasers (VCSELs) emitting in the short- and long-wavelength domains (0.9-1.3μm). Our study concerns two types of components: ...

EPFL2013

Polarization mode structure in long-wavelength wafer-fused vertical-cavity surface-emitting lasers

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Nicolas Volet

Applications of long-wavelength (lambda > 1 mu m) vertical-cavity surface-emitting lasers (VCSELs) generally require close control over wavelength and polarization of the emitted light. In most cases, single mode and polarization stable lasing is desired. ...

Spie-Int Soc Optical Engineering, Po Box 10, Bellingham, Wa 98227-0010 Usa2012

Light control and microcavity lasers based on quantum wires integrated in photonic-crystal cavities

Kirill Atlasov

Novel light-emitting devices and micro-optical-circuit elements will rely upon understanding and control of light-matter interaction at the nanoscale. Recent advances in nanofabrication and micro-processing make it possible to develop integrable solid-stat ...

EPFL2009

Dynamics of quantum dot lasers

Pablo Moreno

The exceptional performance of self-assembled Quantum Dot (QD) materials renders them extremely appealing for their use as optical communications devices. As lasers, they feature reduced and temperature independent threshold current and proper emission wav ...

EPFL2008

Wafer-Fused 1310 nm and 1550 nm Mode-Locked Semiconductor Disk Lasers

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman

We report on fabrication and performance of wafer fused, high power, passively mode-locked semiconductor disc lasers operating in 1310 nm and 1550 nm bands. These devices comprise gain mirrors based on InAlGaAs/InP multi quantum well active regions fused t ...

Ieee2011

Lattice-matched AlInN alloys for nitride-based optoelectronic devices

Julien Dorsaz

Gallium Nitride (GaN) and its ternary alloys with aluminium and indium have met a growing interest in the last decade. These semiconductors have a large direct bandgap and can be doped with either silicon (Si) for n-type and magnesium (Mg) for p-type layer ...

EPFL2006

Recent Progress in Wafer-Fused VCSELs Emitting in the 1550-nm Band

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu

Record-high fundamental mode output power of 1.5 mW at 100 degrees C is achieved with InAlGaAs-InP/AlGaAs-GaAs 1550 nm wavelength vertical cavity surface emitting lasers (VCSELs) produced by a modified wafer fusion technique. A broad wavelength setting on ...

Ieee Service Center, 445 Hoes Lane, Po Box 1331, Piscataway, Nj 08855-1331 Usa2011

Development of MEMS Programmable Diffraction Gratings for Spectroscopic Applications in the Visible, Near- and Mid-Infrared

Robert Andrew Lockhart

This work presents the development of two MEMS programmable diffraction gratings designed for spectroscopic applications in the visible, near- and mid-infrared. These devices have been developed to limit distortion of their optical surfaces at rest and thr ...

EPFL2011

Group iii nitride light-emitting devices having a polarization-doped region

Jean-François Carlin

A light-emitting device comprising a substrate-supported Group III nitride semiconductor region having a p-n junction region for injecting carriers into an optically active region, wherein the p-n junction region comprises an aluminum indium gallium nitrid ...

2006