Recombination coefficients of GaN-based laser diodes

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On the Response Speed of Narrowband Organic Optical Upconversion Devices

Frank Nüesch, Roland Hany, Surendra Babu Anantharaman, Wei-Hsu Hu, Matthias Diethelm

Organic upconversion devices (OUCs) consist of an organic infrared photodetector and an organic visible light-emitting diode (OLED), connected in series. OUCs convert photons from the infrared to the visible and are of use in applications such as process c ...

WILEY-V C H VERLAG GMBH2022

Perovskite Solar Cells with Carbon-Based Electrodes - Quantification of Losses and Strategies to Overcome Them

Ulf Anders Hagfeldt, Dmitry Bogachuk, Bowen Yang, Jiajia Suo

Carbon-based electrodes represent a promising approach to improve stability and up-scalability of perovskite photovoltaics. The temperature at which these contacts are processed defines the absorber grain size of the perovskite solar cell: in cells with lo ...

WILEY-V C H VERLAG GMBH2022

GaN vertical power devices on silicon substrates

Riyaz Mohammed Abdul Khadar

Gallium Nitride (GaN) is a wonder material which has widely transformed the world by enabling energy-efficient white light-emitting diodes. Over the past decade, GaN has also emerged as one of the most promising materials for developing power devices which ...

EPFL2021

Heterostructure design and field management in III-N high-electron mobility electronic devices

Catherine Erine

III-N family of materials has offered multiple groundbreaking technologies in the field of optoelectronics and high-power radio-frequency (RF) devices. Blue light-emitting diodes (LEDs) have revolutionized low-energy lighting. Gallium nitride (GaN) RF mark ...

EPFL2021

Enhancement Mode Tri-gate GaN Power Devices and Logic Circuits

Minghua Zhu

Gallium Nitride (GaN) is one of the most promising materials for high frequency power switching due to its exceptional properties such as large saturation velocity, high carrier mobility, and high breakdown field strength. The high switching frequency of G ...

EPFL2021

p-GaN field plate for low leakage current in lateral GaN Schottky barrier diodes

Elison de Nazareth Matioli, Catherine Erine, Luca Nela

High-voltage gallium nitride Schottky barrier diodes (SBDs) suffer from large off-state leakage current, which further degrades during operation at high temperatures and limits the device blocking capabilities. The key to achieving low off-state leakage is ...

AIP American Institute of Physics2021

Diamond on GaN integration for power semiconductor devices with efficient thermal management

Reza Soleiman Zadeh Ardebili

The international actions against global warming demands reductions in carbon emission and more efficient use of energy. Energy efficiency in the conversion and use of electricity, as an important form of energy in the modern life, has strong environmental ...

EPFL2021

Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy

Jean-François Carlin, Nicolas Grandjean, Mauro Mosca, Camille Haller

Recent studies demonstrated that the performance of InGaN/GaN quantum well (QW) light emitting diodes (LEDs) can be significantly improved through the insertion of an InGaN underlayer (UL). The current working hypothesis is that the presence of the UL redu ...

IOP PUBLISHING LTD2021

GaN-based power devices: Physics, reliability, and perspectives

Elison de Nazareth Matioli, Riyaz Mohammed Abdul Khadar, Luca Nela

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical ...

AIP Publishing2021

Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer

Jean-François Carlin, Nicolas Grandjean, Camille Haller

We investigate the density of defects and the degradation rate in InGaN light-emitting diodes having identical dislocation density and epitaxial structure, but different indium content in the quantum well (QW; 12%, 16%, 20%). Our results, based on combined ...

IOP PUBLISHING LTD2021

LiNiO Gate Dielectric with Tri-Gate Structure for High Performance E-mode GaN transistors

Elison de Nazareth Matioli, Taifang Wang, Mohammad Samizadeh Nikooytabalvandani, Luca Nela

In this work, a Tri-Gate AlGaN/GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) with lithium nickel oxide (LiNiO) gate dielectric is demonstrated for enhancement-mode (e-mode) operation. The high-quality of pulse-laser-deposited (P ...

IEEE2021

Performance of GaN Power Devices for Cryogenic Applications Down to 4.2 K

Elison de Nazareth Matioli, Palliyage Srilak Nirmana Perera, Catherine Erine, Luca Nela

Gallium nitride (GaN) power devices are employed in an increasing number of applications thanks to their excellent performance. Nevertheless, their potential for cryogenic applications, such as space, aviation, and superconducting systems, has not yet been ...

2021

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