Refractive indexIn optics, the refractive index (or refraction index) of an optical medium is a dimensionless number that gives the indication of the light bending ability of that medium. The refractive index determines how much the path of light is bent, or refracted, when entering a material. This is described by Snell's law of refraction, n1 sin θ1 = n2 sin θ2, where θ1 and θ2 are the angle of incidence and angle of refraction, respectively, of a ray crossing the interface between two media with refractive indices n1 and n2.
Heck reactionThe Heck reaction (also called the Mizoroki–Heck reaction) is the chemical reaction of an unsaturated halide (or triflate) with an alkene in the presence of a base and a palladium catalyst to form a substituted alkene. It is named after Tsutomu Mizoroki and Richard F. Heck. Heck was awarded the 2010 Nobel Prize in Chemistry, which he shared with Ei-ichi Negishi and Akira Suzuki, for the discovery and development of this reaction.
MetamaterialA metamaterial (from the Greek word μετά meta, meaning "beyond" or "after", and the Latin word materia, meaning "matter" or "material") is any material engineered to have a property that is rarely observed in naturally occurring materials. They are made from assemblies of multiple elements fashioned from composite materials such as metals and plastics. These materials are usually arranged in repeating patterns, at scales that are smaller than the wavelengths of the phenomena they influence.
Metal–semiconductor junctionIn solid-state physics, a metal–semiconductor (M–S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M–S junctions can either be rectifying or non-rectifying. The rectifying metal–semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact.
Anti-reflective coatingAn antireflective, antiglare or anti-reflection (AR) coating is a type of optical coating applied to the surface of lenses, other optical elements, and photovoltaic cells to reduce reflection. In typical imaging systems, this improves the efficiency since less light is lost due to reflection. In complex systems such as cameras, binoculars, telescopes, and microscopes the reduction in reflections also improves the contrast of the image by elimination of stray light. This is especially important in planetary astronomy.
MOSFETThe metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.
Transverse modeA transverse mode of electromagnetic radiation is a particular electromagnetic field pattern of the radiation in the plane perpendicular (i.e., transverse) to the radiation's propagation direction. Transverse modes occur in radio waves and microwaves confined to a waveguide, and also in light waves in an optical fiber and in a laser's optical resonator. Transverse modes occur because of boundary conditions imposed on the wave by the waveguide.
Near and far fieldThe near field and far field are regions of the electromagnetic (EM) field around an object, such as a transmitting antenna, or the result of radiation scattering off an object. Non-radiative near-field behaviors dominate close to the antenna or scattering object, while electromagnetic radiation far-field behaviors dominate at greater distances. Far-field E (electric) and B (magnetic) field strength decreases as the distance from the source increases, resulting in an inverse-square law for the radiated power intensity of electromagnetic radiation.
