Publication

Characterization & Modeling of Gate-Induced-Drain-Leakage with complete overlap and fringing model

2010
Conference Papers

Abstract

This paper investigates and models Gate Induced Drain Leakage (GIDL) for a wide variety of high voltage devices with different low doped drain (LDD) structures. Based on TCAD simulations, we propose semi-analytical a pseudo-2D model for Gate induced Drain leakage. This model includes a complete modeling of the overlap region accounting for technological process and bulk bias dependency through detailed electric field description.

Official source

Graph Chat

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

2010
Conference Papers

Abstract

Official source

Related concepts (22)

Threshold voltage

The threshold voltage, commonly abbreviated as Vth or VGS(th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (VGS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency. When referring to a junction field-effect transistor (JFET), the threshold voltage is often called pinch-off voltage instead.

MOSFET

The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET.

Transistor

A transistor is a semiconductor device used to amplify or switch electrical signals and power. It is one of the basic building blocks of modern electronics. It is composed of semiconductor material, usually with at least three terminals for connection to an electronic circuit. A voltage or current applied to one pair of the transistor's terminals controls the current through another pair of terminals. Because the controlled (output) power can be higher than the controlling (input) power, a transistor can amplify a signal.

Related publications (9)

Characterization & Modeling of Gate-Induced-Drain-Leakage with complete overlap and fringing model

Chat with Graph Search

Room-temperature, 96×96 pixel 3D-stacked InGaAs/InP SPAD sensor with complementary gating for flash LiDAR

X-HEEP: An Open-Source, Configurable and Extendible RISC-V Platform for TinyAI Applications

Ambipolar Si Nanowire Field Effect Transistors for Low Current and Temperature Sensing