Publication

Selective Area Growth-Based InP/InGaAs Geigermode Avalanche Photodiode Arrays for Single-Photon Imaging

2026

Abstract

We present results of the design, materials and fabrication of 96×96 and 288×162 InP/InGaAs avalanche photodiode arrays for Geiger-mode operation in the shortwave infrared wavelength band. The arrays use a planar device architecture and are fabricated using a process combining selective area growth and a single Zn diffusion to mitigate edge breakdown effects. Measurements were performed on test pixels included in the chip design. The dark count rate is reported as a function of bias and temperature conditions.

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2026

Abstract

Official source

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