Publications related to Centralized Short-Circuit Protection of SiC Modules Connected in Parallel

Related publications (10)

Electrical effects in winding of large electrical ac machines application to advanced large size DFIM

To meet the electrical grid's demand on pump power variation, GE Renewable Energy develops since 10 years variable speed machines (also called Doubly Fed Induction Generators or DFIG). Within turbogenerators, the phenomenon of circulating currents in Roebe ...

EPFL2019

Slanted Tri-gates for High-Voltage GaN Power Devices

Elison de Nazareth Matioli, Jun Ma

In this letter, we introduce and demonstrate the concept of slanted tri-gates to enhance the breakdown voltage (V-BR) in lateral GaN power devices. Conventionally, field plates (FPs) are used to enhance the V-BR by distributing more homogeneously the elect ...

Institute of Electrical and Electronics Engineers2017

Graphene Field Effect Devices and Circuits : Theory and Fabrication

Clemens Benedict Nyffeler

Electronics today permeate our life and existence. It has become nearly impossible to evade any dependence on electronic devices that surround us every day - computers, phones, televisions. But also other objects become increasingly "smart" - watches, cars ...

EPFL2016

Dual-threshold-voltage configurable circuits with three-independent gate silicon nanowire FETs

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Jian Zhang

We extend ambipolar silicon nanowire transistors by using three independent gates and show an efficient approach to implement dual-threshold-voltage configurable circuits. Polarity and threshold voltage of uncommitted devices are determined by applying dif ...

2013

The electron–hole bilayer tunnel FET

Mihai Adrian Ionescu, Luca De Michielis, Livio Lattanzio

We propose a novel tunnel field-effect transistor (TFET) concept called the electron–hole bilayer TFET (EHBTFET). This device exploits the carrier tunneling through a bias-induced electron–hole bilayer in order to achieve improved switching and higher driv ...

Elsevier2012

Self heating in AlInN/AlN/GaN high power devices: Origin and impact on contact breakdown and IV characteristics

Nicolas Grandjean, Jean-François Carlin, Eric Feltin, Marcel Py

It is observed experimentally that high electron mobility transistor devices with short channel length processed from nitride AlInN/AlN/GaN heterostructures containing 2D electron gases (2DEGs) with densities beyond 2 x 10(13) cm(-2) exhibit temperatures u ...

American Institute of Physics2011

Current Waveforms Associated with Positive Flashes Recorded on the Säntis Tower in Summer 2010

Farhad Rachidi-Haeri, Marcos Rubinstein, Mario Paolone, Carlo Alberto Nucci, Carlos Alberto Romero Romero, Pierre Zweiacker, Abraham Rubinstein

2011

Proposal and Validation of Medium-Frequency Power Transformer Design Methodology

Alfred Rufer

Power electronics is continuously evolving toward higher power densities. Consequently, volume, weight, and material reduction are becoming major design issues, which lead the research focus toward high/medium-frequency power conversion systems. This paper ...

2011

Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature

Mihai Adrian Ionescu, Livio Lattanzio, Giovanni Antonio Salvatore

Tunnel FETs (TFETs) have attracted much interest in the last decade for their potential to be used as small slope switches, suitable for future logic circuits operating with a supply voltage smaller than 0.5 V and for reduced Ioff levels. It has been shown ...

IEEE2010

Modeling and Control of the Cross-Connected Intermediate-Level Voltage Source Inverter

Alfred Rufer

Multilevel inverter applications have become more and more common. Multilevel topologies have now to serve new purposes, and interest is rising in new application fields. Recent multilevel technologies have the potential to significantly reduce the size of ...

Institute of Electrical and Electronics Engineers2010