Publication

Free-Electron Lasers and Semiconductor Physics - 1st Results on Nonlinear Optics, Interfaces, and Desorption

Giorgio Margaritondo, Pierre-André Baudat
1994
Journal Articles

Abstract

During the past year, the broad tunability (1-10 mum) and megawatt peak intensity made available by the Vanderbilt Free-Electron Laser opened new and productive avenues to semiconductor research. This paper overviews three of these experimental areas: nonlinear optical absorption in germanium, photoabsorption at heterojunction interfaces with emphasis on highly accurate measurements of band-edge discontinuities, and finally resonant photodesorption/ablation.

Official source

https://infoscience.epfl.ch/entities/publication/69b8e3be-3c6c-4d10-9dce-b0e7ebcaf467

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Giorgio Margaritondo, Pierre-André Baudat
1994
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/69b8e3be-3c6c-4d10-9dce-b0e7ebcaf467

About this result

Related concepts (32)

Semiconductor

A semiconductor is a material which has an electrical conductivity value falling between that of a conductor, such as copper, and an insulator, such as glass. Its resistivity falls as its temperature rises; metals behave in the opposite way. Its conducting properties may be altered in useful ways by introducing impurities ("doping") into the crystal structure. When two differently doped regions exist in the same crystal, a semiconductor junction is created.

Semiconductor device

A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most applications. They conduct electric current in the solid state, rather than as free electrons across a vacuum (typically liberated by thermionic emission) or as free electrons and ions through an ionized gas.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

Related publications (19)

Free-Electron Lasers and Semiconductor Physics - 1st Results on Nonlinear Optics, Interfaces, and Desorption

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