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This article presents a comprehensive multiphysics simulation of an integrated liquid-cooled silicon carbide (SiC) power module. In contrast to existing multiphysics studies, we experimentally validate the numerical model from a thermal perspective with an error margin of less than 4%, thereby enhancing the reliability of the model in terms of electrothermal coupling, nonisothermal flow, and thermal expansion. This validation offers valuable insights for the design of power modules with a novel embedded heat sink. Furthermore, we explore the electromagnetic–thermal effects in SiC power modules at high frequencies. It is found that at a switching frequency of 2 MHz, the eddy current loss in the selected area of the DBC copper layer reaches 48.5 W, resulting in a 4.3 ∘ C increase in the maximum junction temperature of the chip. In addition, due to the skin effect and magnetic field migration, the eddy current loss shows a trend of initially increasing, then decreasing with frequency.