Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

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High-temperature compatible passivating contacts based on phosphorus doped polysilicon (poly-Si(n)) on a thin silicon oxide, employed on the rear side of bifacial n-PERT like solar cells provide an efficiency increase while being compatible with current ph ...

Multi-channel GaN power device, consisting of stacking multiple two-dimensional-electron-gas (2DEG) channels, has been demonstrated to achieve unprecedented on-state performance while maintaining high breakdown voltage (VBR). However, the large carrier den ...

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The development of cost-effective and earth-abundant semiconducting materials is imperative for the sustainable deployment of photovoltaic technology. Zinc phosphide (Zn3P2) is a promising candidate for terawatt-scale electricity generation. It has a near- ...

Ferroelectric materials are explored for numerous applications thanks to their properties associated with electrically switchable spontaneous polarization. Perovskites are an established class of ferroelectrics used for sensors and actuators. However, they ...

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The science and engineering of two-dimensional materials (2DMs), in particular, of 2D semiconductors, is advancing at a thriving pace. It is well known that these delicate few-atoms thick materials can be damaged during the processing toward their integrat ...

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

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22.8% full-area bifacial n-PERT solar cells with rear side sputtered poly-Si (n) passivating contact

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