Publication

1st Results of Microspectroscopy from a Scanning Photoemission Microscope with a Submicron Probe Size

Giorgio Margaritondo
1993
Journal Articles

Abstract

Utilizing a Mo-Si multilayer coated Schwarzschild objective to focus 95 eV photons, we have recently demonstrated better than 0.1 mum resolution as a scanning x-ray transmission microscope. Operating as a scanning photoemission microscope with submicron resolution, we have demonstrated its chemical mapping capabilities by studying a patterned Al/AlO(x) test structure. In addition, we have also studied the cleaved GaAs (110) surface and have identified lateral variations in the surface band bending on the scale of 100 meV. In both experiments, core level microspectroscopy was performed at selected points on the sample to elucidate the image contrast mechanisms.

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https://infoscience.epfl.ch/entities/publication/63ea7625-cd46-4cbd-8455-e5a167f7f4a4

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Giorgio Margaritondo
1993
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/63ea7625-cd46-4cbd-8455-e5a167f7f4a4

About this result

Related concepts (23)

Electron microscope

An electron microscope is a microscope that uses a beam of electrons as a source of illumination. They use electron optics that are analogous to the glass lenses of an optical light microscope. As the wavelength of an electron can be up to 100,000 times shorter than that of visible light, electron microscopes have a higher resolution of about 0.1 nm, which compares to about 200 nm for light microscopes.

Phase-contrast imaging

Phase-contrast imaging is a method of that has a range of different applications. It measures differences in the refractive index of different materials to differentiate between structures under analysis. In conventional light microscopy, phase contrast can be employed to distinguish between structures of similar transparency, and to examine crystals on the basis of their double refraction. This has uses in biological, medical and geological science.

Band bending

In solid-state physics, band bending refers to the process in which the electronic band structure in a material curves up or down near a junction or interface. It does not involve any physical (spatial) bending. When the electrochemical potential of the free charge carriers around an interface of a semiconductor is dissimilar, charge carriers are transferred between the two materials until an equilibrium state is reached whereby the potential difference vanishes.

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1st Results of Microspectroscopy from a Scanning Photoemission Microscope with a Submicron Probe Size

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