Publication

Gain coupled DFB lasers with active layer grown on a corrugated substrate by molecular beam epitaxy

Denis Martin
1997
Journal Articles

Abstract

Using in situ hydrogen desorption before the growth of the 12nm thick active InGaAs layer over V-grooves, operation of gain coupled DFB lasers at 989nm is achieved al room temperature. As-cleaved lasers, 600 mu m long, have threshold current densities as low as 250A/cm(2) and typical sidemode suppression ratios of 40dB.

Official source

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