Publications related to Integer Fluxonium Qubit

Related publications (4)

Exploring optically active defects in wide-bandgap materials using fluorescence microscopy

Defects in solid-state systems can be both detrimental, deteriorating the quality of materials, or desired, thanks to the novel functionality they bring. Optically active point defects, producing fluorescent light, are a great example of the latter. Natura ...

EPFL2021

Characterization and Modeling of Mismatch in Cryo-CMOS

Edoardo Charbon

This paper presents a device matching study of a commercial 40-nm bulk CMOS technology operated at cryogenic temperatures. Transistor pairs and linear arrays, optimized for device matching, were characterized over the temperature range from 300 K down to 4 ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Equilibrium reconstruction in an iron core tokamak using a deterministic magnetisation model

Olivier Sauter, Martinus Adela Maria Gijs, Jonathan Graves, Ambrogio Fasoli, Stefano Coda, Basil Duval, Henri Weisen, Richard Pitts, Yves Martin, Javier García Hernández, Duccio Testa, Miguel Fernández Ruiz, Nicola Vianello, Robin Humphry-Baker, Sun Hee Kim, Federico Nespoli, Patrick Blanchard, Alessandro Pau, David Pfefferlé, Davide Galassi, Jonathan Marc Philippe Faustin, Cristian Sommariva, Hamish William Patten, Samuel Lanthaler, Jan Horacek, Yann Camenen, Bruno Emanuel Ferreira De Sousa Correia, José Pedro Rebelo Ferreira Marques, Mikhail Maslov, Marco Wischmeier, Dalziel Joseph Wilson, Liang Yao, Daniel Scott Alessi, Arnout Lodewijk M Beckers, Ana Francisca Leal Silva Soares, Jonnathan Cesar Hidalgo Acosta, Antonio José Pereira de Figueiredo, Partha Dutta, Pierre-Thomas Paul Brun, Pedro Camilo de Oliveira e Silva, Alberto Hernando de Castro, Julio Rodriguez, Vlad Trifa, Li Shuai, Rebecca Hill

In many tokamaks ferromagnetic material, usually referred to as an iron-core, is present in order to improve the magnetic coupling between the solenoid and the plasma. The presence of the iron core in proximity to the plasma changes the magnetic topology w ...

2018

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

Mihai Adrian Ionescu, Luca De Michielis, Arnab Biswas, Livio Lattanzio

We report a novel device which exploits the internally combined quantum mechanical Band-To-Band and Barrier Tunneling mechanisms to achieve improved performances and overcome the intrinsic low current drive limitations of conventional Tunnel FETs and the 6 ...

IEEE2010