Publication

3.3V Sub-nA Voltage Gap Readout Circuit for Memristive Biosensing in Silicon Nanowire

2025

Abstract

This paper proposes a sub-nanoampere readout circuit designed for fast and precise detection with silicon nanowire (SiNW) memristive biosensors via voltage gap measurement. Compared to traditional solutions, the proposed circuit, completed in 65 nm bulk CMOS process, significantly enhances sensitivity to the picoampere range and reduces measurement time from several minutes to one second. Comprehensive performance evaluation has been performed by considering SiNW models with different crossing behavior, including post-layout extraction (PEX) simulations. Accuracy of up to 20−30mV can be achieved on a particular prescaler configuration, which confirms circuit’s suitability for high-speed biosensing, real-time diagnostics and scalable integration into large sensor arrays.

Official source

https://infoscience.epfl.ch/entities/publication/61f9b056-3ea6-4708-83d3-accdd1a4e819

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2025

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/61f9b056-3ea6-4708-83d3-accdd1a4e819

About this result

Related concepts (32)

Integrated circuit

An integrated circuit or monolithic integrated circuit (also referred to as an IC, a chip, or a microchip) is a set of electronic circuits on one small flat piece (or "chip") of semiconductor material, usually silicon. Large numbers of miniaturized transistors and other electronic components are integrated together on the chip. This results in circuits that are orders of magnitude smaller, faster, and less expensive than those constructed of discrete components, allowing a large transistor count.

CMOS

Complementary metal–oxide–semiconductor (CMOS, pronounced "sea-moss", siːmɑːs, -ɒs) is a type of metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication process that uses complementary and symmetrical pairs of p-type and n-type MOSFETs for logic functions. CMOS technology is used for constructing integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS), and other digital logic circuits.

65 nm process

The 65 nm process is an advanced lithographic node used in volume CMOS (MOSFET) semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm. For comparison, cellular ribosomes are about 20 nm end-to-end. A crystal of bulk silicon has a lattice constant of 0.543 nm, so such transistors are on the order of 100 atoms across. By September 2007, Intel, AMD, IBM, UMC and Chartered were also producing 65 nm chips.

Related publications (2)

3.3V Sub-nA Voltage Gap Readout Circuit for Memristive Biosensing in Silicon Nanowire

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Performance at the service of architecture

Formation and properties of nanometer-thick platinum silicide layers