Raman Spectroscopy of GaAs Nanowires : Doping Mechanisms and Fundamental Properties

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Raman Spectroscopy of GaAs Nanowires : Doping Mechanisms and Fundamental Properties

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Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Realization of Organocerium-Based Fullerene Molecular Materials Showing Mott Insulator-Type Behavior

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Light Emission and Conductance Fluctuations in Electrically Driven and Plasmonically Enhanced Molecular Junctions

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