Publications related to Modeling of the MOSFET for the Design of Cryo-CMOS Circuits

Related publications (11)

Hydrogenated Amorphous Silicon Charge-Selective Contact Devices on a Polyimide Flexible Substrate for Dosimetry and Beam Flux Measurements

Nicolas Würsch, Jonathan Emanuel Thomet, Sylvain Dunand

Hydrogenated amorphous silicon (a-Si:H) devices on flexible substrates are currently being studied for application in dosimetry and beam flux measurements. The necessity of in vivo dosimetry requires thin devices with maximal transparency and flexibility. ...

MDPI2025

Bilateral photon emission from a vibrating mirror and entanglement generation

Alberto Mercurio

Entanglement plays a crucial role in the development of quantum-enabled devices. One significant objective is the deterministic creation and distribution of entangled states, achieved, for example, through a mechanical oscillator interacting with confined ...

SCIPOST FOUNDATION2025

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

Electron optics simulation in the overall gyrotron geometry

Jean-Philippe Hogge, Jérémy Genoud

A model is presented for simulating the electron beam within the entire gyrotron geometry using an electron optics code. The model incorporates the influence of the electromagnetic fields generated by the cavity's operational mode through a simple self-con ...

American Institute of Physics (AIP)2024

Overview of Cryogenic Operation in Nanoscale Technology Nodes

Edoardo Charbon

Cryogenic operation is the backbone of many cutting edge applications. Significant work has been done to characterize and model all cryogenic effects for creating a reliable, robust and efficient cryogenic design across a wide range of technologies and pro ...

IEEE2023

Cryogenic InGaAs HEMT-Based Switches For Quantum Signal Routing

Christian Enz, Hung-Chi Han

We demonstrate cryogenic switching devices based on HEMT technology for scalable quantum computer (QC) control and readout signal routing. The switches are implemented in a quantum well network design without metal contacts between gates, and exhibit extre ...

IEEE2022

Vertically-Stacked Silicon Nanowire Transistors with Controllable Polarity: a Robustness Study

Giovanni De Micheli, Pierre-Emmanuel Julien Marc Gaillardon, Hassan Ghasemzadeh Mohammadi

Vertically-stacked Silicon NanoWire FETs (SiN- WFETs) with gate-all-around control are the natural and most advanced extension of FinFETs. At advanced technology nodes, due to Schottky contacts at channel interfaces, devices show an ambipolar behavior, i.e ...

2013

An Efficient Gate Library for Ambipolar CNTFET Logic

Giovanni De Micheli, Mohamed Haykel Ben Jamaa

Recently, several emerging technologies have been reported as potential candidates for controllable ambipolar devices. Controllable ambipolarity is a desirable property that enables the on-line configurability of n-type and p-type device polarity. In this ...

2011

Thermally induced voltage shift in capacitance-voltage characteristics and its relation to oxide/semiconductor interface states in Ni/Al2O3/InAlN/GaN heterostructures

Nicolas Grandjean, Jean-François Carlin

The Ni/Al2O3/InAlN/AlN/GaN metal-oxide-semiconductor heterostructure (MOS-H) is investigated using capacitance-voltage and capacitance-time characteristics in the temperature range of 25-300 degrees C. An anomalous positive voltage shift of the capacitance ...

2009

Trap-limited transport in rubrene transistors

Libero Zuppiroli, Marie-Noëlle Bussac

The charge carrier mobility in the transport channel of an organic transistor is estimated within the framework of a trap-and-release model. The model accounts for the observed dependence of the mobility on the dielectric constant "epsilon" of the gate ins ...

AIP American Institute of Physics2009

Top-Down Design of a Low-Power Multi-Channel 2.5-Gbit/s/Channel Gated Oscillator Clock-Recovery Circuit

Yusuf Leblebici, Seyed Armin Tajalli, Paul Victor Georges Muller

We present a complete top-down design of a low-power multi-channel clock recovery circuit based on gated current-controlled oscillators. The flow includes several tools and methods used to specify block constraints, to design and verify the topology down t ...

IEEE2005