An Efficient Gate Library for Ambipolar CNTFET Logic

Chat with Graph Search

Ask any question about EPFL courses, lectures, exercises, research, news, etc. or try the example questions below.

DISCLAIMER: The Graph Chatbot is not programmed to provide explicit or categorical answers to your questions. Rather, it transforms your questions into API requests that are distributed across the various IT services officially administered by EPFL. Its purpose is solely to collect and recommend relevant references to content that you can explore to help you answer your questions.

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

Machine learning and data processing algorithms have been thriving in finding ways of processing and classifying information by exploiting the hidden trends of large datasets. Although these emerging computational methods have become successful in today's ...

Organic electrochemical transistors (OECTs) have gained enormous attention due to their potential for bioelectronics and neuromorphic computing. However, their implementation into real-world applications is still impeded by a lack of understanding of the c ...

Side-channel disassembly attacks recover CPU instructions from power or electromagnetic side-channel traces measured during code execution. These attacks typically rely on physical access, proximity to the victim device, and high sampling rate measuring in ...

Strain is an inevitable phenomenon in two-dimensional (2D) material, regardless of whether the film is suspended or supported. Moreover, strain is known to alter the physical and chemical properties, such as the band gap, charge carrier effective masses, d ...

The digital revolution has significantly transformed our world over the past decades, driven by the scaling of transistor dimensions and the exponential increase in computation power. However, as the CMOS scaling era approaches its end, the semiconductor i ...

Defects in solids are unavoidable and can create complex electronic states that can significantly influence the electrical and optical properties of semiconductors. With the rapid progress in the integration of 2D semiconductors in practical devices, it is ...

Factored form is a powerful multi-level representation of a Boolean function that readily translates into an implementation of the function in CMOS technology. In particular, the number of literals in a factored form correlates strongly with the number of ...

The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

The pervasive adoption of field-programmable gate arrays (FPGAs) in both cyber-physical systems and the cloud has raised many security issues. Being integrated circuits, FPGAs are susceptible to fault and power side-channel attacks, which require physical ...

This work presents a study of p-type passivating contacts based on SiCx formed via a rapid thermal processing (RTP) step, using conditions compatible with the firing used to sinter screen-printed metallization pastes in industry. The contributions of the t ...

With Moore's law coming to an end, increasingly more hope is being put in specialized hardware implemented on reconfigurable architectures such as Field-Programmable Gate Arrays (FPGAs). Yet, it is often neglected that these architectures themselves experi ...

Semiconductor materials have given rise to today's digital technology and consumer electronics. Widespread adoption is closely linked to the ability to process and integrate them in devices at scale. Where flexibility and large surfaces are required, such ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

An Efficient Gate Library for Ambipolar CNTFET Logic

Chat with Graph Search

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

2D Nanosystems: Applications of 2D Semiconductors for In-Memory Computing

Unraveling the Electrochemical Electrode Coupling in Integrated Organic Electrochemical Transistors

Instruction-Level Power Side-Channel Leakage Evaluation of Soft-Core CPUs on Shared FPGAs

Atomic-scale Characterization of Strain and Gate effects on Two-dimensional Materials by Scanning Tunneling Microscopy

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

Electrical spectroscopy of defect states and their hybridization in monolayer MoS2

Improving Standard-Cell Design Flow using Factored Form Optimization

Electronic metadevices for terahertz applications

Evaluating, Exploiting, and Hiding Power Side-Channel Leakage of Remote FPGAs

Understanding and mitigating resistive losses in fired passivating contacts: role of the interfaces and optimization of the thermal budget

Automating the Design of Programmable Interconnect for Reconfigurable Architectures

Semiconductor-based device architectures in multimaterial fibers

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy