Top-Down Design of a Low-Power Multi-Channel 2.5-Gbit/s/Channel Gated Oscillator Clock-Recovery Circuit

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The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices(1). As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting ma ...

GeSn is a promising group-IV semiconductor material for on-chip Si photonics devices and high-mobility transistors. These devices require the use of doped GeSn regions, achieved preferably in situ during epitaxy. From the electronic valence point of view, ...

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This article investigates the device variability induced by the total ionizing dose (TID) effects in a commercial 16-nm bulk nFinFETs, using specially designed test structures and measurement procedures aimed at maximizing the matching between devices. DC ...

Top-Down Design of a Low-Power Multi-Channel 2.5-Gbit/s/Channel Gated Oscillator Clock-Recovery Circuit

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Electronic metadevices for terahertz applications

Surfactant behavior and limited incorporation of indium during in situ doping of GeSn grown by molecular beam epitaxy

Electronic readout of DNA amplification in nanoliter chambers. Strategies towards highly parallel semiconductor-based nucleic acid amplification testing

2D Nanosystems: Applications of 2D Semiconductors for In-Memory Computing

Utilizing XMG-based Synthesis to Preserve Self-Duality for RFET-Based Circuits

Edge-Contact MoS2 Transistors Fabricated Using Thermal Scanning Probe Lithography

Exploring negative capacitance and neuromorphic devices based on CMOS-compatible ferroelectric HfO2

Energy Efficient Sensing using Steep Slope Devices

Low-Power Artificial Neural Network Perceptron Based on Monolayer MoS2

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

List Ordered Statistics Decoders for Polar Codes

Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs