Publication

Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots

2009
Conference Papers

Abstract

We report on the dependence on temperature of the homogeneous and inhomogeneous broadening of the fundamental transition of single polar GaN/AlN quantum dots (QDs). Stranski-Krastanov QDs have been grown by molecular beam epitaxy using NH3 as a nitrogen source, with a very low surface density. Low temperature (LT) microphotoluminescence measurements have been performed on 200 nm wide mesas in order to isolate the luminescence of single QDs. The linewidth is found to vary from 590 mu eV at 4 K up to 1350 mu eV at 65 K in a dot of 6 monolayer height. Though the LT linewidth is still dominated by spectral diffusion, the temperature dependent broadening up to 50 K is mainly accounted for by interactions between excitons and acoustic phonons through a coupling coefficient value nearly two orders of magnitude larger than its counterpart in InAs QDs. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Official source

https://infoscience.epfl.ch/entities/publication/5dabc50e-db91-4df9-8108-ef071a5cdd6a

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2009
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/5dabc50e-db91-4df9-8108-ef071a5cdd6a

About this result

Related concepts (32)

Quantum dot

Quantum dots (QDs) – also called semiconductor nanocrystals, are semiconductor particles a few nanometres in size, having optical and electronic properties that differ from those of larger particles as a result of quantum mechanics. They are a central topic in nanotechnology and materials science. When the quantum dots are illuminated by UV light, an electron in the quantum dot can be excited to a state of higher energy. In the case of a semiconducting quantum dot, this process corresponds to the transition of an electron from the valence band to the conductance band.

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Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.

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Related publications (2)

Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots

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