Metal gateA metal gate, in the context of a lateral metal–oxide–semiconductor (MOS) stack, is the gate electrode separated by an oxide from the transistor's channel – the gate material is made from a metal. In most MOS transistors since about the mid 1970s, the "M" for metal has been replaced by a non-metal gate material. The first MOSFET (metal–oxide–semiconductor field-effect transistor) was made by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, and demonstrated in 1960. They used silicon as channel material and a non-self-aligned aluminum gate.
Magnetic momentIn electromagnetism, the magnetic moment is the magnetic strength and orientation of a magnet or other object that produces a magnetic field. Examples of objects that have magnetic moments include loops of electric current (such as electromagnets), permanent magnets, elementary particles (such as electrons), composite particles (such as protons and neutrons), various molecules, and many astronomical objects (such as many planets, some moons, stars, etc).
Magnetic fieldA magnetic field is a vector field that describes the magnetic influence on moving electric charges, electric currents, and magnetic materials. A moving charge in a magnetic field experiences a force perpendicular to its own velocity and to the magnetic field. A permanent magnet's magnetic field pulls on ferromagnetic materials such as iron, and attracts or repels other magnets.
Spontaneous emissionSpontaneous emission is the process in which a quantum mechanical system (such as a molecule, an atom or a subatomic particle) transits from an excited energy state to a lower energy state (e.g., its ground state) and emits a quantized amount of energy in the form of a photon. Spontaneous emission is ultimately responsible for most of the light we see all around us; it is so ubiquitous that there are many names given to what is essentially the same process.
Electrical synapseAn electrical synapse is a mechanical and electrically conductive link between two neighboring neurons that is formed at a narrow gap between the pre- and postsynaptic neurons known as a gap junction. At gap junctions, such cells approach within about 3.8 nm of each other, a much shorter distance than the 20- to 40-nanometer distance that separates cells at chemical synapse. In many animals, electrical synapse-based systems co-exist with chemical synapses.
Two-dimensional electron gasA two-dimensional electron gas (2DEG) is a scientific model in solid-state physics. It is an electron gas that is free to move in two dimensions, but tightly confined in the third. This tight confinement leads to quantized energy levels for motion in the third direction, which can then be ignored for most problems. Thus the electrons appear to be a 2D sheet embedded in a 3D world. The analogous construct of holes is called a two-dimensional hole gas (2DHG), and such systems have many useful and interesting properties.
Gating (electrophysiology)In electrophysiology, the term gating refers to the opening (activation) or closing (by deactivation or inactivation) of ion channels. This change in conformation is a response to changes in transmembrane voltage. When ion channels are in a 'closed' (non-conducting) state, they are impermeable to ions and do not conduct electrical current. When ion channels are in their open state, they conduct electrical current by allowing specific types of ions to pass through them, and thus, across the plasma membrane of the cell.
Static random-access memoryStatic random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The term static differentiates SRAM from DRAM (dynamic random-access memory) — SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed.
Memory pagingIn computer operating systems, memory paging (or swapping on some Unix-like systems) is a memory management scheme by which a computer stores and retrieves data from secondary storage for use in main memory. In this scheme, the operating system retrieves data from secondary storage in same-size blocks called pages. Paging is an important part of virtual memory implementations in modern operating systems, using secondary storage to let programs exceed the size of available physical memory.
Electronic componentAn electronic component is any basic discrete electronic device or physical entity part of an electronic system used to affect electrons or their associated fields. Electronic components are mostly industrial products, available in a singular form and are not to be confused with electrical elements, which are conceptual abstractions representing idealized electronic components and elements. Electronic components have a number of electrical terminals or leads.
Silicon–germaniumSiGe (ˈsɪɡiː or ˈsaɪdʒiː), or silicon–germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture.
Atomic layer depositionAtomic layer deposition (ALD) is a thin-film deposition technique based on the sequential use of a gas-phase chemical process; it is a subclass of chemical vapour deposition. The majority of ALD reactions use two chemicals called precursors (also called "reactants"). These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors.
