Publication

AlInN as high-index-contrast material for GaN-based optoelectronics

Jean-François Carlin, Julien Dorsaz
2004
Conference Papers

Abstract

High quality AlInN was grown near lattice-matched to GaN. It shows about 7% index contrast with GaN. AlInN is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN distributed Bragg reflector with over 90% reflectivity. Light emitting diodes with active layers grown on top of AlInN/GaN multi-layers exhibit internal quantum efficiencies comparable to those of reference diodes grown directly on GaN buffer, this further demonstrate that AlInN material quality can meet the needs of optoelectronic application.

Official source

https://infoscience.epfl.ch/entities/publication/5a44cbab-33dc-4c14-aad5-8b6d3fb499da

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Jean-François Carlin, Julien Dorsaz
2004
Conference Papers

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/5a44cbab-33dc-4c14-aad5-8b6d3fb499da

About this result

Related concepts (27)

Gallium nitride

Gallium nitride () is a binary III/V direct bandgap semiconductor commonly used in blue light-emitting diodes since the 1990s. The compound is a very hard material that has a Wurtzite crystal structure. Its wide band gap of 3.4 eV affords it special properties for applications in optoelectronic, high-power and high-frequency devices. For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without requiring nonlinear optical frequency-doubling.

Light-emitting diode

A light-emitting diode (LED) is a semiconductor device that emits light when current flows through it. Electrons in the semiconductor recombine with electron holes, releasing energy in the form of photons. The color of the light (corresponding to the energy of the photons) is determined by the energy required for electrons to cross the band gap of the semiconductor. White light is obtained by using multiple semiconductors or a layer of light-emitting phosphor on the semiconductor device.

Laser diode

A laser diode (LD, also injection laser diode or ILD, or diode laser) is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction. Driven by voltage, the doped p–n-transition allows for recombination of an electron with a hole. Due to the drop of the electron from a higher energy level to a lower one, radiation, in the form of an emitted photon is generated. This is spontaneous emission.

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AlInN as high-index-contrast material for GaN-based optoelectronics

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