Optical bistability in InGaN-based multisection laser diodes

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We present a low-temperature time-resolved cathodoluminescence study on (In,Ga)N/GaN quantum wells grown on the (11-22) facets of non-coalesced ELO-GaN. Taking advantage of the quantum confined Stark effect, such structures have been proposed as promising ...

We measure the modal absorption coefficient of the InGaN quantum wells (QWs) in the absorber section of (Al,In)GaN multisection laser diodes as a function of bias voltage and photon energy using optical gain-spectroscopy. In the examined laser diodes, the ...

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Optical bistability in InGaN-based multisection laser diodes

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Linear and Time-Resolved THz Spectroscopy of Photonic and Charge Transporting Systems

Time-resolved cathodoluminescence on polychromatic light emitting (In,Ga)N quantum wells grown on (11-22) GaN facets

Bias-dependent absorption coefficient of the absorber section in GaN-based multisection laser diodes

Dynamic switching of hole character and single photon polarization using the quantum confined Stark effect in quantum dot-in-dot structures

Power-scalable 1.57µm mode-locked semiconductor disk laser using wafer fusion

Dynamics of quantum dot lasers

Different pressure behavior of GaN/AlGaN quantum structures grown along polar and nonpolar crystallographic directions

Synthesis and optical investigation of single polar GaN/AlN quantum dots

Picosecond time resolved cathodoluminescence to study semiconductor materials and heterostructures

Realization and study of InAs/GaAs quantum dot superluminescent diodes emitting at 1.3µm

Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells