Publication

Cathodoluminescence and TEM investigations of stress relaxation mechanisms in GaxIn1-xP/InP heterostructures

Jean-Daniel Ganière
1995
Book Chapters

Abstract

Two tensile-strained GaxIn1-xP / InP (001) heterostructures (with x = 6.5% and x = 11.2%) have been studied by TEM and cathodoluminescence. In both structures stacking faults and twins, located in the epilayer, have been found preferably along the [(1) over bar 10] direction whereas perfect misfit dislocations have been observed at the interface in the [110] and [(1) over bar 10] directions. The two types of structures differ about the nature of the misfit dislocations and about the thickness of the twins and this is thought to be due to the different stress relaxation amounts in these structures.

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https://infoscience.epfl.ch/entities/publication/59ca0ab1-a376-4280-8700-0be377d7f4bf

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Jean-Daniel Ganière
1995
Book Chapters

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/59ca0ab1-a376-4280-8700-0be377d7f4bf

About this result

Related concepts (18)

Dislocation

In materials science, a dislocation or Taylor's dislocation is a linear crystallographic defect or irregularity within a crystal structure that contains an abrupt change in the arrangement of atoms. The movement of dislocations allow atoms to slide over each other at low stress levels and is known as glide or slip. The crystalline order is restored on either side of a glide dislocation but the atoms on one side have moved by one position. The crystalline order is not fully restored with a partial dislocation.

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Cathodoluminescence and TEM investigations of stress relaxation mechanisms in GaxIn1-xP/InP heterostructures

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