Publications related to High performance wafer-fused semiconductor disk lasers emitting in the 1300 nm waveband

Related publications (31)

Photonic-electronic integrated circuit-based coherent LiDAR engine

Edoardo Charbon, Tobias Kippenberg, Anton Lukashchuk, Zheru Qiu, Xinru Ji, Andrey Voloshin, Grigorii Likhachev, Yang Liu, Andrea Bancora, Halil Kerim Yildirim

Chip-scale integration is a key enabler for the deployment of photonic technologies. Coherent laser ranging or FMCW LiDAR, a perception technology that benefits from instantaneous velocity and distance detection, eye-safe operation, long-range, and immunit ...

Nature Portfolio2024

Sub-kHz-Linewidth External-Cavity Laser (ECL) With Si3N4 Resonator Used as a Tunable Pump for a Kerr Frequency Comb

Tobias Kippenberg, Junqiu Liu

Combining optical gain in direct-bandgap III-V materials with tunable optical feedback offered by advanced photonic integrated circuits is key to chip-scale external-cavity lasers (ECL), offering wideband tunability along with low optical linewidths. Exter ...

IEEE Institute of Electrical and Electronics Engineers2023

Exploring nonlinearities in multimode optical fibers for lasers and computing

Ugur Tegin

Multimode optical fibers are the backbone of telecommunication and medical imaging. When light with high intensity travels through a multimode fiber, photons and matter start to interact and propa-gation becomes nonlinear. The nonlinear propagation of ligh ...

EPFL2021

Surface-based luminescence measurement substrate

Nicolas Maxime André Descharmes, Raphaël Barbey

Surface-based measurement substrate including: • - at least one optical cavity layer (7); • - a first optical mirror (9) and a second optical mirror (11), the first and second optical mirrors enclosing the optical cavity layer and defining an optical cavit ...

2020

High-Power 760 nm VECSEL Based on Quantum Dot Gain Mirror

Elyahou Kapon, Alexandru Mereuta, Andrei Caliman, Grigore Suruceanu

We report high-power second-harmonic generation of 760 nm laser light from optically-pumped vertical-external-cavity surface-emitting laser based on quantum dot active medium. The laser generates 1.2 W in fundamental transverse mode with fixed linear polar ...

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC2020

Mask-aligner Talbot lithography using a 193 nm CW light source

Toralf Scharf, Wilfried Noell, Raoul Kirner

We present and discuss Talbot mask-aligner lithography, relying on a continuous wave laser emitting at 193nm for the illumination. In this source, a diode laser at 772nm is amplified by a tapered amplifier in master-oscillator power-amplifier configuration ...

2018

Near-field characterization of Bloch surface waves based 2D optical components

Richa Dubey

Bloch surface waves (BSWs) are surface electromagnetic modes that propagate at the interface between a multilayer substrate and a homogeneous external medium. The optical field of the surface mode is confined near the surface of the multilayer. This vertic ...

EPFL2017

Erbium doped random fiber laser and fiber mixing effect

Luc Thévenaz, Camille Sophie Brès, Can Yao

We demonstrate an active random fiber laser by directly pumping a 100 m erbium-doped fiber at 980 nm wavelength, with a fiber loop mirror forming a half-open cavity. Random lasing with competing spectral modes in the range from 1535 nm to 1560 nm is achiev ...

2017

Polarization mode control of long-wavelength VCSELs by intracavity patterning

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Zlatko Mickovic, Christopher Michael Long

Polarization mode control is enhanced in wafer-fused verticalcavity surface-emitting lasers emitting at 1310 nm wavelength by etching two symmetrically arranged arcs above the gain structure within the laser cavity. The intracavity patterning introduces bi ...

Optical Soc Amer2016

A 1.5-W frequency-doubled semiconductor disk laser tunable over 40 nm at around 745 nm

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev

We report on a semiconductor disk laser emitting 1.5 W of output power at the wavelength of 745 nm via intracavity frequency doubling. The high power level and the >40 nm tuning range make the laser a promising tool for medical treatments that rely on phot ...

Spie-Int Soc Optical Engineering2016

Bringing short-lived dissipative Kerr soliton states in microresonators into a steady state

Tobias Kippenberg, Martin Hubert Peter Pfeiffer, Victor Brasch, Michael Wolfgang Geiselmann

Dissipative Kerr solitons have recently been generated in optical microresonators, enabling ultrashort optical pulses at microwave repetition rates, that constitute coherent and numerically predictable Kerr frequency combs. However, the seeding and excitat ...

Optical Society of America2016

Optical Injection and Lasing Dynamics in Long-Wavelength VCSELs With Intracavity Patterning

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Zlatko Mickovic, Dalila Ellafi, Christopher Michael Long

We present the static and optical injection response of wafer-fused long-wavelength VCSELs with and without intracavity patterning. It is found that the extra optical cavity patterning increases the gain anisotropy between orthogonal polarization modes, in ...

Ieee-Inst Electrical Electronics Engineers Inc2015

750 nm 1.5 W frequency-doubled semiconductor disk laser with a 44 nm tuning range

Elyahou Kapon, Alexei Sirbu, Vladimir Iakovlev

We demonstrate 1.5 W of output power at the wavelength of 750 nm by intracavity frequency doubling a wafer-fused semiconductor disk laser diode-pumped at 980 nm. An optical-to-optical efficiency of 8.3% was achieved using a bismuth borate crystal. The wave ...

Optical Society of America2015

Electrically Pumped Vertical-External-Cavity Surface-Emitting Lasers With Patterned Tunnel Junction for Single Transversal-Mode Emission

Elyahou Kapon, Alexei Sirbu

This paper reports on a numerical analysis of methods for current injection into AlInGaAs/InP tunnel-junction electrically pumped vertical-external-cavity surface-emitting lasers. The tunnel junction is patterned to minimize the current crowding effect and ...

Ieee-Inst Electrical Electronics Engineers Inc2015

GaN-based photonic crystal cavities on silicon for visible and near infrared applications

Noelia Vico Triviño

Photonic crystal (PhC) cavities combine ultra-high quality (Q) factors with small mode volumes, resulting in an enhancement of the light-matter interaction at the nanoscale, which, beyond fundamental studies is advantageous for countless applications in ph ...

EPFL2015

Analysis of structurally sensitive loss in GaN-based VCSEL cavities and its effect on modal discrimination

Nicolas Grandjean, Gatien Cosendey

Lateral loss causes optical energy to leave the laser cavity in the transverse, lateral, direction, and is sometimes neglected to simplify the numerical simulations. However, in contrast to outcoupling and absorption losses, we show that the lateral loss c ...

Optical Soc Amer2014

Control of cavity lifetime of 1.5 mu m wafer-fused VCSELs by digital mirror trimming

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Grigore Suruceanu, Zlatko Mickovic, Dalila Ellafi

Digital chemical etching is used to trim the output mirror thickness of wafer-fused VCSELs emitting at a wavelength near 1.5 mu m. The fine control of the photon cavity lifetime thus achieved is employed to extract important device parameters and optimize ...

Optical Soc Amer2014

Optical mode control in long-wavelength vertical-cavity surface-emitting lasers

Nicolas Volet

EPFL2014

Optical injection locking of transverse modes in 1.3-mu m wavelength coupled-VCSEL arrays

Elyahou Kapon, Benjamin Dwir, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev, Andrei Caliman, Lukas Mutter, Christopher Michael Long

Optical injection locking of 1.3-mu m phase-locked VCSEL arrays defined by patterned tunnel junctions and wafer fusion is investigated experimentally and theoretically. The impact of the overlap between the master laser injection beam and the injected mode ...

Optical Society of America2014

High-power flip-chip semiconductor disk laser in the 1.3 μm wavelength band

Elyahou Kapon, Alexandru Mereuta, Alexei Sirbu, Vladimir Iakovlev

We present 6.1 W of output power from a flip-chip semiconductor disk laser (SDL) emitting in the 1.3 mu m wavelength region. This is the first demonstration of a flip-chip SDL in this wavelength range with output powers that are comparable to those obtaine ...

Optical Soc Amer2014