Publication

Testing the Temperature Limits of GaN-Based HEMT Devices

Nicolas Grandjean, Jean-François Carlin
2010
Journal Articles

Abstract

The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure FETs has been evaluated by a stepped temperature test routine under large-signal operation. While AlGaN/GaN high-electron mobility transistors (HEMTs) have failed in an operating temperature range of 500 degrees C, InAlN/GaN HEMTs have been operated up to 900 degrees C for 50 h (in vacuum). Failure is thought to be still contact metallization stability related, indicating an extremely robust InAlN/GaN heterostructure configuration.

Official source

https://infoscience.epfl.ch/entities/publication/5878f618-9c89-43af-8f4f-5d8ed1fefb57

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Testing the Temperature Limits of GaN-Based HEMT Devices

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