Publication

Localization effects in Co- and Ni-doped Bi2Sr2CaCu2O8+gamma

Giorgio Margaritondo, Helmuth Berger
1996
Journal Articles

Abstract

We have studied the influence of Co and Ni doping on the electronic band structure and the transport properties of high-temperature superconductors. The doping has dramatic effects on both the normal and the superconducting state. Upon doping the residual resistivity increases strongly. For sufficiently high Co concentration the temperature dependence rho(T) turns from a simple linear dependence to one displaying a minimum around T-min = 190 K. This minimum is followed by an upturn (d rho/dT

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https://infoscience.epfl.ch/entities/publication/55fef12c-6350-41cf-a8c8-c6b14df3314a

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Giorgio Margaritondo, Helmuth Berger
1996
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/55fef12c-6350-41cf-a8c8-c6b14df3314a

About this result

Related concepts (32)

Electrical resistivity and conductivity

Electrical resistivity (also called volume resistivity or specific electrical resistance) is a fundamental specific property of a material that measures its electrical resistance or how strongly it resists electric current. A low resistivity indicates a material that readily allows electric current. Resistivity is commonly represented by the Greek letter ρ (rho). The SI unit of electrical resistivity is the ohm-metre (Ω⋅m).

Electronic band structure

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have (called band gaps or forbidden bands). Band theory derives these bands and band gaps by examining the allowed quantum mechanical wave functions for an electron in a large, periodic lattice of atoms or molecules.

Doping (semiconductor)

In semiconductor production, doping is the intentional introduction of impurities into an intrinsic semiconductor for the purpose of modulating its electrical, optical and structural properties. The doped material is referred to as an extrinsic semiconductor. Small numbers of dopant atoms can change the ability of a semiconductor to conduct electricity. When on the order of one dopant atom is added per 100 million atoms, the doping is said to be low or light.

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Localization effects in Co- and Ni-doped Bi2Sr2CaCu2O8+gamma

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