Visible-near-middle infrared spanning supercontinuum generation in a silicon nitride (Si3N4) waveguide

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Owing to their wide direct bandgap tenability, III-nitride (III-N) compound semiconductors have been proven instrumental in the development of blue light-emitting diodes that led to the so-called solid-state lighting revolution and blue laser diodes that a ...

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Silicon nitride has emerged as a prominent platform for building photonics integrated circuits. While its nonlinear properties based on third-order effects have been successfully exploited, an efficient second harmonic generation in standard stoichiometric ...

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All-optical poling leads to an effective second-order nonlinearity (chi((2))) in centrosymmetric materials without the need for sophisticated fabrication techniques or material processing, through the periodic self-organization of the charges. The absence ...

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Visible-near-middle infrared spanning supercontinuum generation in a silicon nitride (Si3N4) waveguide

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III-nitride photonic cavities

Band alignment at beta-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations

Formation Rules and Dynamics of Photoinduced χ(2) Gratings in Silicon Nitride Waveguides

Direct Growth of Hexagonal Boron Nitride on Photonic Chips for High-Throughput Characterization

Fabrication and Characterization of Freestanding Single Crystal Diamond and Silicon Microresonators

Nonlinear Frequency Conversion in the Hybrid Silicon Nitride - Lithium Niobate Integrated Platform

Difference frequency generation in optically poled silicon nitride waveguides

Optically Probed Time Dynamics of χ(2) Grating Inscription in SiN Waveguides

16-Core Recirculating Programmable Si Photonic MEMS

Halogen-bond driven self-assembly of perfluorocarbon monolayers on silicon nitride

Second- and third-order nonlinear wavelength conversion in an all-optically poled Si3N4 waveguide

Supercontinuum generation in silicon nitride (Si_3N_4) waveguides for middle infrared spectroscopy

Facile N-functionalization and strong magnetic communication in a diuranium(v) bis-nitride complex

GaN vertical power devices on silicon substrates