Publications related to Optimization of NH₃-MBE grown p-doped (Al)GaN layers and their implementation in long wavelength laser diodes and tunnel junctions

Related publications (36)

Metal Doping of Strongly Confined Halide Perovskite Nanocrystals under Ambient Conditions

Emad Oveisi, Aurélien Bornet, Pascal Alexander Schouwink, Sascha Feldmann, Tejas Deshpande, Zachary Andrew Vanorman

Halide perovskite nanocrystals are promising materials for optoelectronic applications. Metal doping provides an avenue to boost their performance further, e.g., by enhancing light emission, or to provide additional functionalities, such as nanoscale magne ...

American Chemical Society (ACS)2025

On the influence of the buffer layer on the optical quality of AlN-on-sapphire epilayers for photonic integrated devices

Nicolas Grandjean, Camille Sophie Brès, Jean-François Carlin, Raphaël Butté, Samantha Sbarra, Samuele Brunetta

In the last decade, aluminum nitride (AlN) has proven to be an attractive material for both linear and nonlinear integrated photonics, due to its large transparency window, its low propagation losses and the presence of both second- and third-order nonline ...

SPIE2025

Coherent Dissipative Structures in Arbitrary Dispersion-Engineered Gallium Phosphide Fabry-Perot Resonators

Tobias Kippenberg, Nikolai Kuznetsov, Alisa Davydova, Andrey Gelash

The diversity of experimentally observed nonlinear coherent and partially coherent optical structures, including breathing, zero-dispersion, and switching wave states in driven optical microresonators, is mainly provided by cavity dispersion engineering. R ...

IEEE2025

Spin polarization detection via chirality-induced tunnelling currents in indium selenide

Shun Feng, Andras Kis, Gabriele Pasquale, Eloi Régis L Collette

Chirality, a basic property of symmetry breaking, is crucial for fields such as biology and physics. Recent advances in the study of chiral systems have stimulated interest in the discovery of symmetry-breaking states that enable exotic phenomena such as s ...

Springer Science and Business Media LLC2025

Teaching single-photon detection metrology with off-the-shelf CMOS SPAD detectors

Edoardo Charbon, Claudio Bruschini, Ekin Kizilkan, Utku Karaca

The fabrication of the first CMOS single-photon avalanche diodes (SPADs) back in 2003 paved the way to a range of photodetection applications based on single-photon detection, photon counting, and photon time-stamping. In turn, it has become more and more ...

SPIE2025

Electron beam-based direct writing of nanostructures using a palladium β-ketoesterate complex

Chinmai Sai Jureddy, Patrik Willi Hoffmann

Gas-assisted focused electron beam-induced deposition (FEBID) as a direct, minimally invasive 3D nanopatterning tool offers many advantages in making nanostructures with complex shapes and novel compositions for evolving nanotechnological applications. In ...

BEILSTEIN-INSTITUT2025

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Yao Chen

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

Investigating Non-equilibrium Physics in Wide Bandgap Semiconductors and Quantum Materials via Ultrafast Spectroscopy

Hui-Yuan Chen

This thesis uses femtosecond laser spectroscopy in studying strong correlation in condensed matters that are pertinent to future technology: a wide bandgap perovskite and a quantum material, with the employment of ultrafast time-resolved spectroscopy in th ...

EPFL2024

Doping Engineering for PDP Optimization in SPADs Implemented in 55-nm BCD Process

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee, Wenfeng Liu

We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in a 55-nm Bipolar-CMOS-DMOS (BCD) technology. We demonstrate how to systematically engineer doping profiles in the main junction and in deep p-well layers ...

Ieee-Inst Electrical Electronics Engineers Inc2024

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Pierre Christophe Lottigier

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

EPFL2024

Dataset to accompany publication "Best practices in measuring absorption at the macro- and microscale"

Giulia Tagliabue, Alan Richard Bowman, Fateme Kiani Shahvandi, Jiaming Ma

This dataset accompanies the publication "Best practices in measuring absorption at the macro- and microscale" published in APL Photonics. The data can be used to reproduce original plots in figures 1-4 in the main text and all original plots in the suppor ...

Zenodo2024

Shortwave Infrared-Sensitive, Narrowband Organic Upconversion Devices with a Gain

Wei-Hsu Hu

Sensing and imaging of light in the shortwave infrared (SWIR) range is increasingly used in various fields, including bio-imaging, remote sensing, and semiconductor process control. SWIR-sensitive organic photodetectors (OPDs) are promising because organic ...

EPFL2024

Silicon CMOS and InGaAs(P)/InP SPADs for NIR/SWIR detection

Utku Karaca

Applications demanding imaging at low-light conditions at near-infrared (NIR) and short-wave infrared (SWIR) wavelengths, such as quantum information science, biophotonics, space imaging, and light detection and ranging (LiDAR), have accelerated the develo ...

EPFL2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Didem Dede

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Ezgi Genç

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

EPFL2024

Investigation of room-temperature single-photon emitters in GaN-based materials and GaN/AlN quantum dots

Johann Nicolaï Stachurski

Over the past decade, quantum photonics platforms aiming at harnessing the fundamental properties of single particles, such as quantum superposition and quantum entanglement, have flourished. In this context, single-photon emitters capable of operating at ...

EPFL2024

Phase-stable indium sulfide achieves an energy conversion efficiency of 14.3% for solar-assisted carbon dioxide reduction to formate

Michael Graetzel, Jingshan Luo, Jing Gao, Jun Li

Tremendous efforts have been made in developing highly selective catalysts for electrochemical CO 2 conversion to formate. However, the rapid deactivation resulting from structural reconstruction and phase transition poses considerable challenges to the sy ...

Cell Press2024

Dissipative Kerr soliton generation at 2μm in a silicon nitride microresonator

Camille Sophie Brès, Marco Clementi, Ozan Yakar, Anton Stroganov, Christian André Clément Lafforgue

Chip -scale optical frequency combs enable the generation of highly -coherent pulsed light at gigahertz-level repetition rates, with potential technological impact ranging from telecommunications to sensing and spectroscopy. In combination with techniques ...

Optica Publishing Group2024

Photothermal spectroscopy on-chip sensor for the measurement of a PMMA film using a silicon nitride micro-ring resonator and an external cavity quantum cascade laser

Simone Iadanza

Laser-based mid-infrared (mid-IR) photothermal spectroscopy (PTS) represents a selective, fast, and sensitive analytical technique. Recent developments in laser design permits the coverage of wider spectral regions in combination with higher power, enablin ...

Walter De Gruyter Gmbh2024

Advanced Silicon and SWIR Single-Photon Avalanche Diodes: Design, Simulation, and Characterization

Ekin Kizilkan

Low-level light detection with high spatial and timing accuracy is a growing area of interest by virtue of applications such as light detection and ranging (LiDAR), biomedical imaging, time-resolved Raman spectroscopy, and quantum applications. Single-phot ...

EPFL2024