Publications related to Influence of the (111) twinning on the formation of diamond cubic/diamond hexagonal heterostructures in Cu-catalyzed Si nanowires

Related publications (34)

On the influence of the buffer layer on the optical quality of AlN-on-sapphire epilayers for photonic integrated devices

Nicolas Grandjean, Camille Sophie Brès, Jean-François Carlin, Raphaël Butté, Samantha Sbarra, Samuele Brunetta

In the last decade, aluminum nitride (AlN) has proven to be an attractive material for both linear and nonlinear integrated photonics, due to its large transparency window, its low propagation losses and the presence of both second- and third-order nonline ...

SPIE2025

Towards Scalable Electronics: Synthetic 2D Materials for Large-Area 2D Circuit Integration

Zhenyu Wang

In the past decades, a significant increase of the transistor density on a chip has led to exponential growth in computational power driven by Moore's law. To overcome the bottleneck of traditional von-Neumann architecture in computational efficiency, effo ...

EPFL2024

III-N blue-emitting epi-structures with high densities of dislocations: Fundamental mechanisms for efficiency improvement and applications

Pierre Christophe Lottigier

Since the dawn of humanity, human beings seeked to light their surroundings for their well-being, security and development. The efficiency of ancient lighting devices, e.g. oil lamps or candles, was in the order of 0.03-0.04% and jumped to 0.4-0.6% with th ...

EPFL2024

Growth and Doping Mechanisms of III-V Nanostructures by Selective Area Epitaxy

Didem Dede

Selective area epitaxy (SAE), applied to semiconductor growth, allows tailored fabrication of intricate structures at the nanoscale with enhanced properties and functionalities. In the field of nanowires (NWs), it adds scalability by enabling the fabricati ...

EPFL2024

Plasmonic Nanostructures for Photocatalysis: Material, Photonic and Electronic Effects

Fateme Kiani Shahvandi

Plasmonic photochemistry has a large potential to replace energy-intensive chemical processes with low-temperature, low-pressure light-driven chemical reactions. Plasmonic nanostructures have emerged as promising photocatalysts with exceptional and tunable ...

EPFL2024

Influence of Si3N4 fillers and pyrolysis profile on the microstructure of additively manufactured silicon carbonitride ceramics derived from polyvinylsilazane

Alper Balkan

In this work, various methods were used to improve the printability of a photocurable polyvinylsilazane resin filled with silicon nitride particles for digital light processing. The developed resin was used as a preceramic polymer for polymer-to-ceramic co ...

Taylor & Francis Ltd2024

Mobility Gaps of Hydrogenated Amorphous Silicon Related to Hydrogen Concentration and Its Influence on Electrical Performance

Nicolas Würsch, Jonathan Emanuel Thomet, Sylvain Dunand

This paper presents a comprehensive study of hydrogenated amorphous silicon (a-Si)-based detectors, utilizing electrical characterization, Raman spectroscopy, photoemission, and inverse photoemission techniques. The unique properties of a-Si have sparked i ...

2024

Microstructural and electrical characterization of high temperature passivating contacts for silicon solar cells

Sofia Libraro

Recombination at metal/semiconductor interfaces represents the main limitation in mainstream c-Si solar cells, primarily based on the passivated emitter and rear cell (PERC) concept. Full-area passivating contacts based on SiOx/poly-Si stacks are a candida ...

EPFL2024

Acoustic emission signature of martensitic transformation in laser powder bed fusion of Ti6Al4V-Fe, supported by operando X-ray diffraction

Roland Logé, Jamasp Jhabvala, Mathijs Pieter van der Meer, Milad Hamidi Nasab, Reza Esmaeilzadeh, Claire Navarre, Charlotte Léopoldine de Formanoir de la Cazerie, Lucas Maximilian Schlenger

This study focuses on investigating Acoustic Emission (AE) monitoring in the Laser Powder Bed Fusion (LPBF) process, using premixed Ti6Al4V-(x wt%) Fe, where x = 0, 3, and 6. By employing a structure-borne AE sensor, we analyze AE data statistically, uncov ...

2024

III-V Nitride Semiconductors Deposited At Low Temperature For Photovoltaic Applications

Jonathan Emanuel Thomet

This thesis reports on the study and use of low temperature processes for the deposition of indium gallium nitride (InGaN) thin films in order to alleviate some of the present drawbacks of its monolitic deposition on silicon for photovoltaic applications. ...

EPFL2023

Exciton migration in two-dimensional materials

Giovanni Consalvo Cistaro

Excitons play an essential role in the optical response of two-dimensional materials. These are bound states showing up in the band gaps of many-body systems and are conceived as quasiparticles formed by an electron and a hole. By performing real-time simu ...

Nature Portfolio2024

Scalable Approaches to III-V Nanowires for Photodetection

Nicholas Paul Morgan

III-V semiconductor nanowires have unique properties that make them ideal for advanced photodetectors on inexpensive substrates. For example, they exhibit enhanced or polarization-dependent light absorption, they can form complex heterostructures, and thei ...

EPFL2023

Font Side Solutions for c-Si Solar Cells with High-Temperature Passivating Contacts

Ezgi Genç

In this work, we studied the potential of using thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) for two main purposes: introducing an n-type passivating contact at the front of a TOPCon solar cell, or simplifying the fabrication o ...

EPFL2024

The nanoscale impact of individual nonradiative point defects on InGaN/GaN quantum wells

Thomas Fjord Kjaersgaard Weatherley

Today's world depends on optoelectronic devices: light-emitting diodes illuminate our houses and backlight the displays on our gadgets, while laser diodes underpin fibre-optic communication. Such optoelectronic devices rely on crystalline semiconductor het ...

EPFL2023

Study of growth-induced point defects and their impact on InGaN-based optoelectronic devices

Yao Chen

GaN exhibits a decomposition tendency for temperatures far below its melting point and common growth temperatures used in metal-organic vapour phase epitaxy (MOVPE).This characteristic is known to be a major obstacle for realising GaN bulk substrate. There ...

EPFL2024

High-precision optical magnetometry using Nitrogen Vacancies in CVD diamond

Hossein Babashah

Sensing weak magnetic fields is a topic of great importance in basic science and technology due to its wide range of applications. In this context, solid-state and nanoscale quantum sensors are poised to revolutionize the sensing platforms due to their ult ...

EPFL2023

Ultra-high quantum coherent and scalable superconducting circuit optomechanics, from topological lattices to quantum storage

Amir Youssefi

Mechanical oscillators can exhibit modes with ultra-low energy dissipation and compact form factors due to the slow velocity of acoustic waves, and are already used in applications ranging from timing to wireless filters. Over the past decade, novel ways i ...

EPFL2024

Tuning Pore Size in Graphene in the Angstrom Regime for Highly Selective Ion-Ion Separation

Kumar Varoon Agrawal, Kangning Zhao, Luis Francisco Villalobos Vazquez de la Parra, Heng-Yu Chi, Shaoxian Li, Kuang-Jung Hsu, Mojtaba Chevalier, Wan-Chi Lee

Zero-dimensional pores spanning only a few angstroms in size in two-dimensional materials such as graphene are some of the most promising systems for designing ion-ion selective membranes. However, the key challenge in the field is that so far a crack-free ...

Amer Chemical Soc2024

Murunskite - a new class of functional material

Davor Tolj

The subject of the present work is discovery and in-depth characterization of a new class of functional materials. Tuning of the bond polarity and orbital occupation with a goal of establishing balance between localization and delocalization of electrons - ...

EPFL2023

Functionalized Å-scale Pores in Graphene for Carbon Capture

Kuang-Jung Hsu

Single-layer graphene, hosting a high density of functionalized molecular-sieving atom-thick pores, is considered to be an excellent material for gas separation membranes. These functionalized atom-thick pores enable the shortest transport pathway across t ...

EPFL2024