P-type InGaN across the entire alloy composition range

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Related publications (32)

Intrinsic Polarization Super Junctions: Design of Single and Multichannel GaN Structures

Elison de Nazareth Matioli, Catherine Erine, Luca Nela, Amirmohammad Miran Zadeh

Super junctions (SJs) have enabled unprecedented performance in Silicon power devices, which could be further improved by applying this concept to wide bandgap semiconductors like gallium nitride (GaN). Currently, polarization super junctions (PSJs) are th ...

2022

New Technologies to Enhance the Figures-of-Merit of GaN Power Devices

Luca Nela

Gallium Nitride (GaN) has enabled groundbreaking developments in the field of optoelectronics and radio frequency communication. More recently, GaN devices for power conversion applications have demonstrated excellent potential. Thanks to Gallium Nitride w ...

EPFL2022

Modelling electronic transport in monocrystalline metal oxide gas sensors: from the surface kinetics to the experimental response

Roberto Guarino, Gianluca Piccinini

Gas sensing systems and devices based on metal oxides are widely spreading due to their high performance in terms of sensor response and relatively low costs. Despite several experimental studies, as well as molecular simulations, are available in the lite ...

2022

Near-junction microfluidic cooling for high power-density GaN-on-Si electronics: A wafer, device, packaging, and system-level investigation

Remco Franciscus Peter van Erp

Electrification of the energy section, from generation to end-use, plays an essential role in reducing global CO2 emission. Innovations in power electronics are required to increase conversion efficiency and power density. Gallium nitride (GaN) transistors ...

EPFL2022

GaN growth on ScAlMgO4 substrates via thermally-dewetted thin Al films

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate the high-temperature growth of GaN on ScAlMgO4 substrates by metalorganic vapor phase epitaxy when a thin Al film is deposited ex situ on the ScAlMgO4 surface, prior to GaN growth. Mirror-like high-quality GaN epitaxial layers ...

IOP Publishing Ltd2022

New metric for carrier selective contacts for silicon heterojunction solar cells

Mathieu Gérard Boccard, Jakub Holovsky

Heterojunction carrier selective contacts for solar cells have gained great attention because of the ability of these contacts to efficiently collect majority carriers while hindering the recombination of minority carriers, thus resulting in the highest re ...

PERGAMON-ELSEVIER SCIENCE LTD2022

A perspective on multi-channel technology for the next-generation of GaN power devices

Elison de Nazareth Matioli, Luca Nela

The outstanding properties of Gallium Nitride (GaN) have enabled considerable improvements in the performance of power devices compared to traditional silicon technology, resulting in more efficient and highly compact power converters. GaN power technology ...

AIP Publishing2022

Direct high-temperature growth of single-crystalline GaN on ScAlMgO4 substrates by metalorganic chemical vapor deposition

Elison de Nazareth Matioli, Alessandro Floriduz

In this note, we demonstrate direct high-temperature growth of single-crystalline GaN on c-plane ScAlMgO4 substrates by metalorganic chemical vapor deposition, without using low-temperature buffers. We found that a trimethylaluminium preflow was crucial to ...

IOP Publishing Ltd2022

Deep defects in InGaN LEDs: modeling the impact on the electrical characteristics

Jean-François Carlin, Nicolas Grandjean, Camille Haller

Deep defects have a fundamental role in determining the electro-optical characteristics and in the efficiency of InGaN light-emitting diodes (LEDs). However, modeling their effect on the electrical characteristics of the LED is not straightforward. ...

SPIE-INT SOC OPTICAL ENGINEERING2022

In Operando, Photovoltaic, and Microscopic Evaluation of Recombination Centers in Halide Perovskite-Based Solar Cells

Ulf Anders Hagfeldt, Henry Snaith, Silver Hamill Turren Cruz

The origin of the low densities of electrically active defects in Pb halide perovskite (HaP), a crucial factor for their use in photovoltaics, light emission, and radiation detection, remains a matter of discussion, in part because of the difficulty in det ...

AMER CHEMICAL SOC2022

Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

Anna Fontcuberta i Morral, Jean-Baptiste Leran, Nicolas Tappy, Nicholas Paul Morgan, Raphaël François Lemerle, Wonjong Kim, Akshay Balgarkashi, Titouan Charvin, Didem Dede, Valerio Piazza

III-V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si techno ...

2022

LiNiO Junction Gate for High-performance Enhancement-mode GaN Power Transistor

Taifang Wang

GaN metal-oxide-semiconductor high electron mobility transistors (MOS)HEMTs) offer outstanding properties for next-generation power electronics devices. The high conductivity, high voltage blocking capability, high operation frequency, and device-level int ...

EPFL2022

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