Publication

Growth temperature dependence of the interfacet migration in chemical beam epitaxy of InP on non-planar substrates

Jean-François Carlin
1996
Journal Articles

Abstract

When InP is grown by chemical beam epitaxy on substrates patterned with ridges oriented along [110] with (111)B sidewall planes, the migration of In species on the surface changes direction with growth temperature. The movement is from the ridge to the valley through the sidewall above 505 degrees C, and from the sidewall to the ridge below 495 degrees C. By using this specific growth behavior, we have obtained a triangular prism-shaped buried heterostructure with a narrow active region. We also present an estimation of the growth temperature dependence of the diffusion length on each plane and propose a model explaining the above migrations.

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https://infoscience.epfl.ch/entities/publication/4c2c65cc-a363-42a5-9ac3-8a986f9467dd

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Jean-François Carlin
1996
Journal Articles

Abstract

Official source

https://infoscience.epfl.ch/entities/publication/4c2c65cc-a363-42a5-9ac3-8a986f9467dd

About this result

Related concepts (18)

Molecular-beam epitaxy

Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. MBE is used to fabricate diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such as CDs and DVDs). Original ideas of MBE process were first established by K.

Epitaxy

Epitaxy (prefix epi- means "on top of”) refers to a type of crystal growth or material deposition in which new crystalline layers are formed with one or more well-defined orientations with respect to the crystalline seed layer. The deposited crystalline film is called an epitaxial film or epitaxial layer. The relative orientation(s) of the epitaxial layer to the seed layer is defined in terms of the orientation of the crystal lattice of each material.

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition.

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Growth temperature dependence of the interfacet migration in chemical beam epitaxy of InP on non-planar substrates

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