Publications related to Simple Expression of the Thermal Noise Excess Factor for LNA Design

Related publications (14)

High Input Impedance Front-End Amplifier for Noncontact Bio-Potential Recording

In this paper, a high input impedance front-end amplifier is proposed for non-contact bio-potential recording systems. The proposed structure uses a positive feedback network to deliver a neutralization current back to the input node of the circuit to neut ...

Institute of Electrical and Electronics Engineers Inc.2023

Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires

Anna Fontcuberta i Morral, Didem Dede, Nicholas Paul Morgan, Valerio Piazza

Selective area epitaxy is a promising approach to definenanowirenetworks for topological quantum computing. However, it is challengingto concurrently engineer nanowire morphology, for carrier confinement,and precision doping, to tune carrier density. We re ...

AMER CHEMICAL SOC2023

New ultrahigh-speed device concepts: from THz nanoplasma devices to glass-like electronics for neuromorphic computation

Mohammad Samizadeh Nikooytabalvandani

There is a never-ending push for electronic systems to provide faster operation speeds, higher energy efficiencies, and higher power capabilities at smaller scales. These requirements are apparent in different areas of electronics, from radiofrequency (RF) ...

EPFL2023

An Energy-Efficient Bridge-to-Digital Converter for Implantable Pressure Monitoring Systems

Marco Mattavelli, Catherine Dehollain, Franco Maloberti, Diego Ruben Barrettino, Kerim Türe, Mustafa Besirli

This paper presents an energy-efficient, duty-cycled, and spinning excitation bridge-to-digital converter (BDC) designed for implantable pressure sensing systems. The circuit provides the measure of the pulmonary artery pressure that is particularly releva ...

2022

Energy Efficient Sensing using Steep Slope Devices

Teodor Rosca

Today, we are witnessing the Internet of Things (IoT) revolution, which facilitates and improves our lives in many aspects, but comes with several challenges related to the technology deployment at large scales. Handling ever growing amounts of information ...

EPFL2022

Nanoplasma-based Millimiter-wave Modulators on a Single Metal Layer

Elison de Nazareth Matioli, Mohammad Samizadeh Nikooytabalvandani

Fundamental constraints imposing power-frequency trade-offs in conventional electronics have stimulated research on alternative technologies for millimeter-wave and sub-millimeter-wave applications. In this work, we use the picosecond threshold firing of n ...

Institute of Electrical and Electronics Engineers2022

A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications

Edoardo Charbon, Andrea Ruffino, Yatao Peng

A cryogenic broadband low noise amplifier (LNA) for quantum applications based on a standard 40-nm CMOS technology is reported. The LNA specifications are derived from the readout of semiconductor quantum bits at 4.2 K, whose quantum information signals ar ...

2021

Optimized electrochemical breakdown etching using temporal voltage variation for formation of nanopores in a silicon membrane

Miao Zhang

Dielectric breakdown etching is a well-known method of making nanopores on thin (similar to 50 nm) dielectric membranes. However, voltage driven translocation of biomolecules through such nanopores becomes extremely fast. For improved detection, for instan ...

ELSEVIER SCIENCE SA2021

First Near-Ultraviolet- and Blue-Enhanced Backside-Illuminated Single-Photon Avalanche Diode Based on Standard SOI CMOS Technology

Edoardo Charbon, Claudio Bruschini, Myung Jae Lee

We present the world's first backside-illuminated (BSI) single-photon avalanche diode (SPAD) based on standard silicon-on-insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology. This SPAD achieves a good dark count rate (DCR) after backs ...

2019

H-terminated polycrystalline diamond p-channel transistors on GaN-on-Silicon

Elison de Nazareth Matioli, Remco Franciscus Peter van Erp, Reza Soleiman Zadeh Ardebili, Riyaz Mohammed Abdul Khadar, Mehdi Naamoun

In many semiconductor technologies, including GaN, the lack of p-channel devices is a major obstacle for complementary operations. Here, we demonstrate high-performance polycrystalline diamond p-channel transistors on GaN-on-Si. Following the optimization ...

Institute of Electrical and Electronics Engineers2019

Label-Free Detection of Tobramycin in Serum by Transmission-Localized Surface Plasmon Resonance

Carlotta Guiducci, Giulia Cappi, Fabio Mario Spiga, Anna Ferretti

In order to improve the efficacy and safety of treatments, drug dosage needs to be adjusted to the actual needs of each patient in a truly personalized medicine approach. Key for widespread dosage adjustment is the availability of point-of-care devices abl ...

Amer Chemical Soc2015

Leakage mechanisms and contact technologies in InAlN/GaN high electron mobility transistors

Lorenzo Lugani

GaN based electronic devices have progressed rapidly over the past decades and are nowadays starting to replace Si and classical III-V semiconductors in power electronics systems and high power RF amplifiers. AlGaN/GaN heterostructures have been, until rec ...

EPFL2015

Cryogenic single chip electron spin resonance detectors

Gabriele Gualco

Methods based on the electron spin resonance (ESR) phenomenon are used to study paramagnetic systems at temperatures that ranges from 1000 to below 1 K. Commercially available spectrometers achieve spin sensitivities in the order of 10^(10) spins/¿Hz at ro ...

EPFL2015

Modeling Parasitic Vertical PNP in HVCMOS

Maher Kayal, Jean-Michel Sallese, Camillo Stefanucci, Pietro Buccella

High voltage CMOS active devices inherently have a parasitic vertical bipolar transistor. The parasitic PNP structure can be activated during high-power switching operation causing a potential shift of the substrate. In this work a spice-modeling approach ...

IEEE2015